74AC00
QUAD 2-INPUT NAND GATE
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HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
ICC = 4 µA (MAX.) at TA = 25 oC
HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
50Ω TRANSMISSION LINE DRIVING
CAPABILITY
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 24 mA (MIN)
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 00
IMPROVED LATCH-UP IMMUNITY

DESCRIPTION
The AC00 is an advanced high-speed CMOS
QUAD 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal

B
M
(Plastic Package)
(Micro Package)
ORDER CODES :
74AC00B
74AC00M
wiring C2MOS technology. It is ideal for low
power applications mantaining high speed
operation similar to equivalent Bipolar Schottky
TTL.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stable output.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

April 1997

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74AC00
INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION
PIN No

SYMBOL

1, 4, 9, 12

1A to 4A

NAME AND F UNCTIO N
Data Inputs

2, 5, 10, 13

1B to 4B

Data Inputs

3, 6, 8, 11

1Y to 4Y

Data Outputs

7

GND

Ground (0V)

14

VCC

Positive Supply Voltage

TRUTH TABLE
A

B

Y

L

L

H

L

H

H

H

L

H

H

H

L

ABSOLUTE MAXIMUM RATINGS
Symbol

Parameter

Unit

-0.5 to +7

V

VI

DC Input Voltage

-0.5 to VCC + 0.5

V

VO

DC Output Voltage

-0.5 to VCC + 0.5

V

IIK

DC Input Diode Current

± 20

mA

IOK

DC Output Diode Current

± 20

mA

IO

DC Output Current

± 50

mA

± 200

mA

VCC

Supply Voltage

Value

ICC or IGND DC VCC or Ground Current
Tstg
TL

Storage Temperature
Lead Temperature (10 sec)

-65 to +150

o

C

300

o

C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.

RECOMMENDED OPERATING CONDITIONS
Symbol
VCC

Parameter
Supply Voltage

VI

Input Voltage

VO

Output Voltage

Top

Operating Temperature:

dt/dv

Input Rise and Fall Time VCC = 3.0, 4.5 or 5.5 V(note 1)

1) VIN from 30% to 70% of VCC

2/7

Value

Un it

2 to 6

V

0 to VCC

V

0 to VCC
-40 to +85
8

V
o

C

ns/V

74AC00
DC SPECIFICATIONS
Symbol

Parameter

Test Con dition s

VIH

High Level Input Voltage

3.0

VO = 0.1 V or
VCC - 0.1 V

4.5
5.5
VIL

Low Level Input Voltage

Value
T A = 25 oC

V CC
(V)

3.0

Min.

Typ.

2.1

1.5

2.1

3.15

2.25

3.15

3.85

2.75

VO = 0.1 V or
VCC - 0.1 V

4.5
5.5
VOH

High Level Output
Voltage

3.0
4.5

(*)

VI =
V IH or
V IL

5.5

Low Level Output
Voltage

Max.

Min .

Max.
V

3.85

1.5

0.9

0.9

2.25

1.35

1.35

2.75

1.65

1.65

I O=-50 µA

2.9

2.99

2.9

IO=-50 µA

4.4

4.49

4.4

IO=-50 µA

5.4

5.49

5.4

IO=-12 mA

2.56

2.46

IO=-24 mA

3.86

3.76

5.5

IO=-24 mA

4.86

3.0

IO=50 µA

0.002

0.1

0.1

IO=50 µA

0.001

0.1

0.1

IO=50 µA

0.001

0.1

0.1

IO=12 mA

0.36

0.44

4.5

IO=24 mA

0.36

0.44

5.5

IO=24 mA

0.36

0.44

4.5

V I (*) =
V IH or
V IL

5.5
3.0

V

V

4.5

3.0

VOL

Unit
-40 to 85 o C

4.76

V

Input Leakage Current

5.5

VI = VCC or GND

±0.1

±1

µA

ICC

Quiescent Supply
Current

5.5

VI = VCC or GND

4

40

µA

IOLD

Dynamic Output Current
(note 1, 2)

5.5

VOLD = 1.65 V max

75

mA

VOHD = 3.85 V min

-75

mA

II

IOHD

1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω.
(*) All outputs loaded.

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = t f =3 ns)
Symbol

Parameter

T est Cond ition
V CC
(V)

tPLH
tPHL

Propagation Delay Time

(*)

3.3
5.0(**)

Value
T A = 25 oC
-40 to 85 o C
Min. Typ. Max. Min . Max.
1.5
1.5

5
4

9.5
8

1
1

10
8.5

Unit

ns

(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5V ± 0.5V

CAPACITIVE CHARACTERISTICS
Symbol

Parameter

Test Con dition s
V CC
(V)

Value
o

T A = 25 C
Min.

Typ.

Max.

Unit
o

-40 to 85 C
Min .

Max.

CIN

Input Capacitance

5.0

4

pF

C PD

Power Dissipation
Capacitance (note 1)

5.0

27

pF

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/n (per circuit)

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74AC00
TEST CIRCUIT

CL = 50 pF or equivalent (includes jig and probe capacitance)
RL = R1 = 500Ω or equivalent
RT =ZOUT of pulse generator (typically 50Ω)

WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)

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74AC00

Plastic DIP14 MECHANICAL DATA
mm

DIM.
MIN.
a1

0.51

B

1.39

TYP.

inch
MAX.

MIN.

TYP.

MAX.

0.020
1.65

0.055

0.065

b

0.5

0.020

b1

0.25

0.010

D

20

0.787

E

8.5

0.335

e

2.54

0.100

e3

15.24

0.600

F

7.1

0.280

I

5.1

0.201

L
Z

3.3
1.27

0.130
2.54

0.050

0.100

P001A
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74AC00

SO14 MECHANICAL DATA
mm

DIM.
MIN.

TYP.

A
a1

inch
MAX.

MIN.

TYP.

1.75
0.1

0.068

0.2

a2

MAX.

0.003

0.007

1.65

0.064

b

0.35

0.46

0.013

0.018

b1

0.19

0.25

0.007

0.010

C

0.5

0.019

c1

45 (typ.)

D

8.55

E

5.8

8.75

0.336

6.2

0.228

0.344
0.244

e

1.27

0.050

e3

7.62

0.300

F

3.8

4.0

0.149

0.157

G

4.6

5.3

0.181

0.208

L

0.5

1.27

0.019

0.050

M
S

0.68

0.026
8 (max.)

P013G
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74AC00

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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