SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current N : ICEX=50nA(Max.), IBL=50nA(Max.) K @VCE=30V, VEB=3V. E G Excellent DC Current Gain Linearity. J D Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance H F F : Cob=4pF(Max.) @VCB=5V. 2 3 C 1 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L Complementary to 2N3906. DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Base Current IB 50 mA 625 mW 1.5 W Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range 2002. 9. 12 PC Tj 150 Tstg -55 150 Revision No : 1 TO-92 1/4 2N3904 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA Base Cut-off Current IBL VCE=30V, VEB=3V - - 50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 60 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V hFE(1) VCE=1V, IC=0.1mA 40 - - hFE(2) VCE=1V, IC=1mA 70 - - hFE(3) VCE=1V, IC=10mA 100 - 300 hFE(4) VCE=1V, IC=50mA 60 - - hFE(5) VCE=1V, IC=100mA 30 - - VCE(sat)1 IC=10mA, IB=1mA - - 0.2 VCE(sat)2 IC=50mA, IB=5mA - - 0.3 VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85 VBE(sat)2 IC=50mA, IB=5mA - - 0.95 300 - - MHz DC Current Gain * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * * fT Transition Frequency V V VCE=20V, IC=10mA, f=100MHz Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 8.0 pF Input Impedance hie 1.0 - 10 k Voltage Feedback Ratio hre 0.5 - 8.0 x10-4 Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 1.0 - 40 Noise Figure NF - - 5.0 - - 35 - - 35 VCE=10V, IC=1mA, f=1kHz VCE=5V, IC=0.1mA Rg=1k , dB f=10Hz 15.7kHz td 10kΩ V in 300ns Rise Time tr 10.9V 275Ω Vout Delay Time C Total< 4pF VCC =3.0V 0 t r ,t f < 1ns, Du=2% -0.5V Switching Time nS Storage Time tstg 10kΩ V in 1N916 or equiv. Fall Time tf 20µs 10.9V -9.1V 275Ω Vout C Total< 4pF VCC =3.0V - - 200 - - 50 0 t r ,t f < 1ns, Du=2% * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2002. 9. 12 Revision No : 1 2/4 2N3904 0.4 60 0.3 40 0.2 I B =0.1mA 20 0 0 1 2 3 Ta=125 C 300 Ta=25 C Ta=-55 C 100 50 30 10 4 COMMON EMITTER VCE =1V 500 0.1 0.3 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 0.5 Ta=25 C 0.3 Ta=125 C 0.1 1 3 10 30 100 300 0.4 0.8 1.2 BASE-EMITTER VOLTAGE VBE (V) 2002. 9. 12 Ta=125 C 0.1 0.05 Ta=25 C Ta=-55 C 0.03 0.01 0.1 0.3 1 3 10 30 100 VCE - I B 40 0 0.3 I C - VBE 80 300 COMMON EMITTER I C /I B =10 0.5 COLLECTOR CURRENT I C (mA) 120 0 100 COLLECTOR CURRENT I C (mA) Revision No : 1 1.6 300 1.0 IC =10mA COMMON EMITTER VCE =1V 160 1 IC =1mA 200 0.3 Ta= 125 C Ta= 25 C Ta=5 5 C COLLECTOR CURRENT I C (mA) 0.1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Ta=-55 C COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 3 1 30 VCE(sat) - I C COMMON EMITTER I C /I E =10 5 10 COLLECTOR CURRENT I C (mA) V BE(sat) - I C 10 3 0.8 I C =100mA 80 1k 0.9 0.8 0.7 0.6 0.5 1 COMMON EMITTER Ta=25 C I C =30mA 100 h FE - I C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - V CE 0.6 0.4 0.2 COMMON EMITTER Ta=25 C 0 0.001 0.01 0.1 1 10 BASE CURRENT I B (mA) 3/4 Cob - VCB , C ib - VEB 50 f=1MHz Ta=25 C CAPACITANCE Cob (pF) C ib (pF) 30 10 C ib 5 3 C ob 1 0.5 0.1 0.3 1 3 10 REVERSE VOLTAGE V CB (V) V EB (V) 2002. 9. 12 Revision No : 1 30 COLLECTOR POWER DISSIPATION PC (mW) 2N3904 Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 4/4