SEMICONDUCTOR

MJE13003

TECHNICAL DATA

TRIPLE DIFFUSED NPN TRANSISTOR

SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.

A
B

D

C
E
F

FEATURES
Excellent Switching Times

G

: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A
H

High Collector Voltage : VCBO=700V.

K

MAXIMUM RATING (Ta=25
CHARACTERISTIC

RATING

UNIT

Collector-Base Voltage

VCBO

700

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

9

V

DC

IC

1.5

Pulse

ICP

3

IB

0.75

A

PC

20

W

Tj

150

Tstg

-55 150

Base Current
Collector Power Dissipation
(Tc=25

)

Junction Temperature
Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC

Collector-Emitter

Base-Emitter

Collector Output Capacitance

)
UNIT

VEB=9V, IC=0

-

-

10

A

hFE(1)

VCE=2V, IC=0.5A

8

-

40

hFE(2)

VCE=2V, IC=1A

5

-

25

IC=0.5A, IB=0.1A

-

-

0.5

IC=1A, IB=0.25A

-

-

1

IC=1.5A, IB=0.5A

-

-

3

IC=0.5A, IB=0.1A

-

-

1

IC=1A, IB=0.25A

-

-

1.2

VCB=10V, f=0.1MHz, IE=0

-

21

-

pF

4

-

-

MHz

-

-

1.1

S

-

-

4.0

S

-

-

0.7

S

Cob

TEST CONDITION

VCE=10V, IC=0.1A

Turn-On Time

ton

300µS

2003. 7. 24

P

TO-126

fT

Fall Time

3

1. EMITTER
2. COLLECTOR
3. BASE

Transition Frequency

Storage Time

2

MAX.

VBE(sat)

Saturation Voltage

O
1

TYP.

VCE(sat)

Saturation Voltage

N

MIN.

IEBO

DC Current Gain

M

MILLIMETERS
8.3 MAX
5.8
0.7
_ 0.1
Φ3.2 +
3.5
_ 0.3
11.0 +
2.9 MAX
1.0 MAX
1.9 MAX
_ 0.15
0.75 +
_ 0.5
15.50 +
_ 0.1
2.3 +
_ 0.15
0.65 +
1.6
3.4 MAX

A

SYMBOL

Emitter Cut-off Current

L

)
SYMBOL

Collector Current

DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P

J

tstg
tf

Revision No : 7

OUTPUT

IB1

INPUT
IB2

IB1=I B2 =0.2A
DUTY CYCLE <
= 2%

V

V

I B1
I B2

125Ω

VCC =125V

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MJE13003

DC CURRENT GAIN
T j =150 C

30

T j =25 C
T j =-55 C

10
5
3

1
0.01

COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)

BASE-EMITTER VOLTAGE
V BE(sat) (V)

50

1.4

COMMON EMITTER
VCE =2V

0.35

0.03

0.1

0.3

1

1
Tj =-55 C

0.8

Tj =25 C
Tj =25 C

0.6

Tj =150 C

0.03

1

2

SWITCHING CHARACTERISTIC
10
5

0.20
0.15
T j =150 C
Tj =25 C

0.05

VCC =125V
IC /IB =5

t stg

3

1
0.5
tf

0.3

T j =-55 C

0
0.01

0.03

0.1

0.3

1

0.1
0.01

2

0.03

0.1

0.3

1

2

COLLECTOR CURRENT I C (A)

P C - Ta

SAFE OPERATING AREA

25
COLLECTOR CURRENT I C (A)

10

20
15
10
5
0
0

50

100

150

AMBIENT TEMPERATURE Ta ( C)

Revision No : 7

200

I C MAX.(PULSED) *

3

1 1
5m mS 00µ
S
S
*
*
*

(DC)

1

µS
10

POWER DISSIPATION PC (W)

0.3

VCE(sat) - I C

COLLECTOR CURRENT I C (A)

2003. 7. 24

0.1

COLLECTOR CURRENT I C (A)

0.25

0.10

1.2

COLLECTOR CURRENT I C (A)

COMMON
EMITTER
I C /I B =3

0.30

V BE(sat) @I C /I B =3
V BE(on) @VCE =2V

0.4
0.01

2

SWITCHING TIME (µs)

DC CURRENT GAIN h FE

100

V BE(sat) - I C

*

0.3
0.1

* SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE

0.03
0.01

1

3

10

30

100

300

1k

COLLECTOR EMITTER VOLTAGE V CE (V)

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