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TMOS Switching

MPF930
MPF960
MPF990

N-Channel — Enhancement
3 DRAIN

1 SOURCE

MAXIMUM RATINGS
Rating
Drain -Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
— Continuous
— Non-repetitive (tp < 50 u.s)

Symbol

MPF930

MPF960

MPF990

Unit

VDS
VDG

35

60

90

Vdc

35

60

90

Vdc

±20
±40

VGS
VGSM

Drain Current
Continuous^)
Pulsed(2)

Vdc
Vpk

TO-92 (TO-226AE)

Adc
2.0
3.0

ID
'DM

PD

Total Device Dissipation
@T A = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range

1.0
8.0

Watts
mVW°C

TJ. Tstg

-55 to 150

°C

9JA

125

"C/W

Thermal Resistance

ELECTRICAL CHARACTERISTICS OA = 25°c unless otherwise noted)
Characteristic

Unit

Min

Typ

Max

35
60
90

—
—
—

—
—
—

'GSS

—

—

50

nAdc

'DSS

—

—

10

uAdc

1.0

—

3.5

Vdc

MPF930
MPF960
MPF990

—
—
_

0.4
0.6

0.6

0.7
0.8
1.2

(ID = 1.0 Adc)

MPF930
MPF960
MPF990

—
—
—

0.9
1.2
1.2

1.4
1.7
2.4

(ID = 2.0 Adc)

MPF930
MPF960
MPF990

—
—
—

2.2
2.8
2.8

3.0
3.5
4.8

Symbol

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = O, lD = 10u-Adc)

Vdc

V(BR)DSX

MPF930
MPF960
MPF990

Gate Reverse Current (VQS = 15 Vdc, VDS = °)
ON CHARACTERISTICS^)
Zero-Gate-Voltage Drain Current
(VDS = Maximum Rating, VQS = 0)
Gate Threshold Voltage
(l D =1.0mAdc.V DS = VGs)
Drain-Source On-Voltage (Vgs = 1 ° Vdc)
(ID = 0.5 Adc)

vGS(Th)

Vdc

vDS(on)

1. The Power Dissipation of the package may result in a lower continuous drain current.
. Pulse Test: Pulse Width ^ 300 us, Duty Cycle z 2.0%.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

MPF930 MPF96O MPF990
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Win

Typ

Max

—
—
—

0.9
1.2
1.2

1.4
1.7
2.0

'D(on)

1.0

2.0

—

Amps

ciss

—

70

—

PF

crss

—

20

—•

PF

CQSS

—

49

—

PF

9fs

200

380

—

mmhos

Turn-On Time

ton

—

7.0

15

ns

Turn-Off Time

toff

—

7.0

15

ns

Characteristic

Symbol

Unit

ON CHARACTERISTICS^) (Continued)
Static Drain-Source On Resistance
(VGS = 1 0 Vdc, ID = 1 .0 Adc)

Q

rDS(on)

MPF930
MPF960
MPF990

On-State Drain Current

(VDS = 25 vdc, VGS = 1 °Vdc)
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 .0 MHz)
Reverse Transfer Capacitance
(vDs = 25 vdc, VGS = o, f =

1 .0 MHZ)

Output Capacitance
(VDS = 25 Vdc. VGS = o, f = 1 .0 MHZ)
Forward Transconductance
(VDS = 25 Vdc, ID = 0.5 Adc)

SWITCHING CHARACTERISTICS

2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.

RESISTIVE SWITCHING

+25 V

T
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V.n^

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r 50 Q ATTENUATOR

TO SAMPLING SCOPE
50 Q INPUT
-,

^

-f

L^J

-1™1*

^

7 C 90%

^\90%

/
i" 5 V "f-i t K T
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J~
~ §50 § 1 0 M

L± J
-

11 1

OUTPUT
INVERTED

INPUT

Figure 1. Switching Test Circuit

\/

v°ut~

~T
10V

/
7^50%

90% Jr
PULSE

50%\~

Vjn-*-J

Figure 2. Switching Waveforms

WIDTH

^N