UTC BT169 SCR SCRs DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 1 TO-92 1:CATHODE 2:GATE 3:ANODE QUICK REFERENCE DATA PARAMETER Repetitive peak off-state voltages SYMBOL BT169B MAX BT169D MAX BT169E MAX BT169G MAX UNIT MAX VDRM, VRRM 200 400 500 600 V IT(AV) 0.5 0.5 0.5 0.5 A IT(RMS) 0.8 0.8 0.8 0.8 A ITSM 8 8 8 8 A Average on-state current RMS on-state current Non-repetitive peak on-state current ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Repetitive peak off-state voltages BT169B BT169D BT169E BT169G Average on-state current (Half sine wave, Tlead≦83°C) RMS on-state current (All conduction angles) Non-repetitive peak on-state current (half sine wave, Tj=25°C prior to surge) t=10ms t=8.3ms I2t for fusing (t=10ms) Repetitive rate of rise of on-state current after triggering (ITM=2A,IG=10mA, dIG/dt=100mA/µs) UTC RATINGS UNIT VDRM,VRRM 200* 400* 500* 600* IT(AV) 0.5 IT(RMS) 0.8 ITSM V A A A 8 9 I2t 0.32 A2S dIT/dt 50 A/µs UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-015,A UTC BT169 SCR SYMBOL RATINGS UNIT Peak gate current PARAMETER IGM 1 A Peak gate voltage VGM 5 V Peak reverse gate voltage VRGM 5 V W Peak gate power Average gate power (Over any 20 ms period) PGM 2 PG(AV) 0.1 W Tstg -40~150 °C Storage temperature Operating junction temperature Tj 125 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/µs. THERMAL RESISTANCES PARAMETER SYMBOL Thermal resistance junction to lead MIN TYP Rth j-lead Thermal resistance junction to ambient (pcb mounted, lead length=4mm) Rth j-a MAX UNIT 60 K/W 150 K/W STATIC ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated) PARAMETER SYMBOL Gate trigger current IGT Latching current TSET CONDITIONS VD=12V, IT=10 mA, gate open circuit MIN TYP 25 UNIT 55 µA 6 mA IL VD=12V, IGT=0.5mA, RGK=1kΩ Holding current IH VD=12V,IGT=0.5mA, RGK=1kΩ 2 5 mA On-state voltage VT IT=1A 1.2 1.35 V VD=12V, IT=10mA, gate open circuit VD=VDRM(max), IT=10mA , Tj=125°C, gate open circuit 0.5 0.3 0.8 0.05 0.1 mA MAX UNIT Gate trigger voltage VGT Off-state leakage current ID,IR 2 MAX 0.2 VD=VDRM(max), VR=VRRM(max), Tj=125°C, RGK=1kΩ V DYNAMIC ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated) PARAMETER SYMBOL Ciritical rate of rise of off-state voltage dVD/dt TSET CONDITIONS VDM=67% VDRM(max), Tj=125°C, exponential waveform, RGK=1kΩ MIN TYP 500 800 V/µs Gate controlled turn-on time tgt ITM=2A,VD=VDRM(max), IG=10mA, dIG/dt=0.1A/µs 2 µs Circuit commutated turn-off time tq VD=67% VDRM(max), Tj=125°C, ITM=1.6A,VR=35V, dITM/dt=30A/µs, VD/dt=2V/µs, RGK=1kΩ 100 µs UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-015,A UTC BT169 SCR FIG.4 Maximnum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50Hz. FIG.1 Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a=form factor=IT(RMS) / IT(AV) 0.8 Ptot / W 0.7 Tc(max) / C conduction angle degrees form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 0.6 0.5 0.4 α=1.57 77 83 1.9 95 2.8 107 0.2 113 α 0.1 0.1 T 0.2 0.3 0.4 IF(AV) / A 0.5 119 0.6 125 0.7 ITSM / A 6 4 2 0 1 10 100 Number of half cycles at 50Hz 1000 FIG.5 Maximum permissible repetitive rms onstate current IT(RMS), versus surge duration, for sinusoidal currents, f= 50Hz; Tlead≦83°C 2.0 IT(RMS) / A 1.5 100 IT 10 1.0 ITSM time T 1 time Tj initial=25°C max FIG.2 Maximum permissible non-repetitive peak onstate current ITSM,versus pulse width tp,for sinusoidal currents, tp≦10ms. 1000 ITSM 101 4 0 IT 8 89 2.2 0.3 0 ITSM / A 10 0.5 Tj initial=25°C max 10µs 100µs T/s 1ms 10ms 0 0.01 FIG.3 Maximum permissible rms current IT(RMS), versus lead temperature, Tlead 1.0 VGT(Tj) VGT(25°C) 1.6 83°C 1.4 1.2 0.6 1.0 0.4 0.8 0.2 0 -50 10 FIG.6 Normalised gate trigger voltage VGT(Tj)/ VGT(25°C), versus junction temperature Tj IT(RMS) / A 0.8 0.1 1.0 surge duration / s 0.6 0 UTC 50 Tlead / C 100 150 0.4 -50 0 50 Tj / C 100 UNISONIC TECHNOLOGIES CO., LTD. 150 3 QW-R301-015,A UTC BT169 SCR FIG.7 Normalised gate trigger current IGT(Tj)/ IGT(25°C), versus junction temperature Tj FIG.10 Typical and maximum on-state characteristic. IGT(Tj) VGT(25°C) 3.0 IT / A 5 2.5 4 2.0 3 1.5 Tj=125°C - - Tj= 25°C Vo=1.067V Rs=0.187Ω typ max 2 1.0 1 0.5 0 -50 0 50 Tj / C 100 0 150 FIG.8 Normalised latching current IL(Tj)/IL(25°C), versus junction temperature Tj, RGK= 1KΩ 3.0 IL(Tj) IL(25°C) 0 0.5 1.0 1.5 VT / V 2.0 2.5 FIG.11 Transient thermal impedance Zth j-lead, versus pulse width tp. Zth j-lead (K/W) 100 2.5 10 2.0 1.5 1 1.0 PD 0.5 0 -50 0 50 Tj / C 100 t 150 0.01 10us FIG.9 Normalised holding current IH(Tj)/IH(25°C), versus junction temperature Tj, RGK=1KΩ 3.0 tp 0.1 IH(Tj) IH(25°C) 0.1ms 1ms 10ms tp / s 0.1s 1s 10s FIG.12 Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. dVD/dt(V/us) 1000 2.5 RGK=1KΩ 2.0 100 1.5 1.0 10 0.5 0 -50 0 50 Tj / C UTC 100 150 1 0 50 Tj / C 100 150 UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-015,A UTC BT169 SCR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R301-015,A