STP16NF06L
STP16NF06LFP
N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET
TYPE
STP16NF06L
STP60NF06LFP
■
■
■
■

VDSS

RDS(on)

ID

60 V
60 V

<0.09 Ω
<0.09 Ω

16 A
11 A

TYPICAL RDS(on) = 0.07Ω
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE AT 100 oC
LOW THRESHOLD DRIVE

3
1

3

2

1

2

DESCRIPTION
TO-220

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.

TO-220FP

INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS
Symbol

Parameter

Value
STP16NF06L

VDS
VDGR
VGS
ID
ID
IDM(•)
Ptot
dv/dt (1)
EAS (2)
VISO
Tstg
Tj

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature

(•) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance

March 2004
.

Unit
STP16NF06LFP

60
60
± 16
16
11
64
45
0.3

11(*)
7.5(*)
44(*)
25
0.17
23
127

--------

2500
-55 to 175

V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C

(1) ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V

1/9

STP16NF06L/FP
THERMAL DATA
Rthj-case

Thermal Resistance Junction-case

Max

Rthj-amb
Tl

Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

Max

TO-220

TO-220FP

3.33

6

°C/W

62.5
300

°C/W
°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol

Parameter

Test Conditions

Drain-source
Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage
Drain Current (VGS = 0)

VDS = Max Rating
VDS = Max Rating TC = 125°C

IGSS

Gate-body Leakage
Current (VDS = 0)

VGS = ± 16V

V(BR)DSS

Min.

Typ.

Max.

60

Unit
V

1
10

µA
µA

±100

nA

Max.

Unit

2.5

V

0.08
0.07

0.10
0.09

Ω
Ω

Typ.

Max.

Unit

ON (1)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On
Resistance

VGS = 5 V
VGS = 10 V

ID = 8 A
ID = 8 A

Min.

Typ.

1

DYNAMIC
Symbol

2/9

Parameter

Test Conditions

Min.

gfs (*)

Forward Transconductance

VDS > ID(on) x RDS(on)max,
ID = 8 A

17

S

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

345
72
29

pF
pF
pF

STP16NF06L/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)
tr

Turn-on Delay Time
Rise Time

VDD = 30 V
ID = 8 A
VGS = 4.5 V
RG = 4.7 Ω
(Resistive Load, Figure 3)

10
37

Qg
Qgs
Qgd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD = 48 V ID = 16 A VGS= 5V

7.3
2.1
3.1

10

nC
nC
nC

Typ.

Max.

Unit

ns
ns

SWITCHING OFF
Symbol
td(off)
tf

Parameter
Turn-off Delay Time
Fall Time

Test Conditions

Min.

VDD = 30 V
ID = 8 A
VGS = 4.5 V
RG = 4.7Ω,
(Resistive Load, Figure 3)

20
12.5

ns
ns

SOURCE DRAIN DIODE
Symbol

Parameter

ISD
ISDM (•)

Source-drain Current
Source-drain Current (pulsed)

VSD (*)

Forward On Voltage

ISD = 16 A

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

ISD = 16 A
di/dt = 100A/µs
Tj = 150°C
VDD = 16 V
(see test circuit, Figure 5)

trr
Qrr
IRRM

Test Conditions

Min.

Typ.

VGS = 0
50
67.5
2.7

Max.

Unit

16
64

A
A

1.3

V
ns
nC
A

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

3/9

STP16NF06L/FP
Thermal Impedance

Thermal Impedance for TO-220FP

Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

4/9

STP16NF06L/FP
Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature

Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STP16NF06L/FP
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive
Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

6/9

STP16NF06L/FP

TO-220 MECHANICAL DATA
mm

DIM.
MIN.

inch
MAX.

MIN.

A

4.40

TYP.

4.60

0.173

0.181

C

1.23

1.32

0.048

0.051

D

2.40

2.72

0.094

0.107

D1

TYP.

1.27

MAX.

0.050

E

0.49

0.70

0.019

0.027

F

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

G

4.95

5.15

0.194

0.203

G1

2.4

2.7

0.094

0.106

H2

10.0

10.40

0.393

0.409

L2

16.4

0.645

13.0

14.0

0.511

0.551

L5

2.65

2.95

0.104

0.116

L6

15.25

15.75

0.600

0.620

L7

6.2

6.6

0.244

0.260

L9

3.5

3.93

0.137

0.154

DIA.

3.75

3.85

0.147

0.151

D1

C

D

A

E

L4

H2

G

G1

F1

L2

F2

F

Dia.
L5

L9
L7
L6

L4

P011C

7/9

STP16NF06L/FP

TO-220FP MECHANICAL DATA
mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

A

4.4

4.6

0.173

0.181

B

2.5

2.7

0.098

0.106

D

2.5

2.75

0.098

0.108

E

0.45

0.7

0.017

0.027

F

0.75

1

0.030

0.039

F1

1.15

1.7

0.045

0.067

F2

1.15

1.7

0.045

0.067

G

4.95

5.2

0.195

0.204

G1

2.4

2.7

0.094

0.106

H

10

10.4

0.393

0.409

L2

16

0.630

28.6

30.6

1.126

1.204

L4

9.8

10.6

0.385

0.417

L6

15.9

16.4

0.626

0.645

L7

9

9.3

0.354

0.366

Ø

3

3.2

0.118

0.126

B

D

A

E

L3

L3
L6

F2

H

G

G1

¯

F

F1

L7

1 2 3
L2

8/9

L4

STP16NF06L/FP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.

© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
www.st.com

9/9