Silicon Carbide
PRELIMINARY

SJEP120R100A
Product Summary

Normally-OFF Trench Silicon Carbide Power JFET

BVDS
RDS(ON)max
ETS,typ

Features:
- Compatible with Standard Gate Driver ICs
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 °C
- 150 °C Maximum Operating Temperature
- RDS(on)max of 0.100 Ω
- Voltage Controlled
4
- Low Gate Charge
- Low Intrinsic Capacitance
Applications:
High Performance Audio

1200
0.100
170

V
Ω
µJ

D(2,4)

G(1)

TO-247
1

2

3
S(3)

Internal Schematic

MAXIMUM RATINGS
Parameter

Symbol

Conditions

Value

Unit

ID, Tj=100

Tj = 100 °C

17

ID, Tj=150

Tj = 150 °C

11

Pulsed Drain Current (1)

IDM

TC = 25 °C

30

A

Short Circuit Withstand Time

tSC

VDD < 800 V, TC < 125 °C

50

µs

Power Dissipation

PD

TC = 25 °C

114

W

-10 to +15

V

-55 to +150

°C

260

°C

Continuous Drain Current

VGS

Gate-Source Voltage
Operating and Storage Temperature

(2)

AC

Tj, Tj,stg

Lead Temperature for Soldering

Tsold

1/8" from case < 10 s

A

(1)

Limited by pulse width
(2)
RgEXT = 1 ohm, tp < 200ns, see Figure 5 for static conditions

THERMAL CHARACTERISTICS
Parameter

Symbol

Value
Typ

Max

Thermal Resistance, junction-to-case

Rth,JC

-

1.1

Thermal Resistance, junction-to-ambient

Rth,JA

-

50

SJEP120R100A Rev1.1

1/8

Unit
°C / W

June 2011

Silicon Carbide
PRELIMINARY

SJEP120R100A

ELECTRICAL CHARACTERISTICS
Parameter

Symbol

Conditions

BVDS

VGS = 0 V, ID = 600 µA
VDS = 1200 V, VGS = 0 V, Tj = 25oC
VDS = 1200 V, VGS = 0 V, Tj = 150oC
VDS = 1200 V, VGS < -10 V,

Min

Value
Typ

Max

1200
-

100
300

600
-

V

-

1

-

µA

-

10

-

-

-0.1
-0.1

-0.3
-

-

0.08

0.1

-

0.20

-

0.75
-

1.00
220
8
0.5

1.25
-

V
mA
Ω
Ω

-

670
103
97

-

pF

-

60

-

-

10
12
30
25
68
87
155
10
15
30
25
82
94
176
30
1
24

-

Unit

Off Characteristics
Drain-Source Blocking Voltage

Total Drain Leakage Current

Total Gate Reverse Leakage

IDSS

IGSS

Tj = 25oC
VDS = 1200 V, VGS < -10 V,
Tj = 150oC
VGS = -10 V, VDS = 0V
VGS = -10 V, VDS = 1200V

mA

On Characteristics
Drain-Source On-resistance

Gate Threshold Voltage
Gate Forward Current
Gate Resistance

RDS(on)
VGS(th)
IGFWD
RG
RG(ON)

ID = 12 A, VGS = 3 V,
Tj = 25 °C
ID = 12 A, VGS = 3 V,
Tj = 125 °C
VDS = 1 V, ID = 34 mA
VGS = 3 V
f = 1 MHz, drain-source shorted
VGS >2.7V; See Figure 5

Ω

Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance,
energy related

Ciss
Coss
Crss

VDD = 100 V

Co(er)

VDS = 0 V to 600 V,
VGS = 0 V

Switching Characteristics
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

SJEP120R100A Rev1.1

ton
tr
toff
tf
Eon
Eoff
Ets
ton
tr
toff
tf
Eon
Eoff
Ets
Qg
Qgs
Qgd

VDS = 600 V, ID = 12 A,
o

Inductive Load, TJ = 25 C
Gate Driver = +15V, -10V,

See Figure 15 and application note for
gate drive recommendations
VDS = 600 V, ID = 12 A,
Inductive Load, TJ = 150oC
Gate Driver = +15V, -10V,

See Figure 15 and application note for
gate drive recommendations

VDS = 600 V, ID = 5 A,
VGS = + 2.5 V

2/8

ns

µJ

ns

µJ

nC

June 2011

Silicon Carbide
PRELIMINARY

Figure 1. Typical Output Characteristics

Figure 2. Typical Output Characteristics

ID = f(VDS); Tj = 25 °C; parameter: VGS

ID = f(VDS); Tj = 100 °C; parameter: VGS

20
3.0 V
ID, Drain-Source Current (A)

ID, Drain-Source Current (A)

40

3.0 V

30

2.5 V

20
2.0 V

10
1.5 V

15

2.5 V

10
2.0 V

5
1.5 V

0

0
0

2
4
VDS, Drain-Source Voltage (V)

0

6

6

Figure 4. Typical Transfer Characteristics

ID = f(VDS); Tj = 150 °C; parameter: VGS

ID = f(VGS); VDS = 5 V

ID, Drain-Source Current (A)

35
3.0 V

12

2.5 V

9
2.0 V

6
3

1.5 V

30
25
20
15
10
5

0
0

1

2

3

4

5

0
0.00

6

VDS, Drain-Source Voltage (V)

0.50

1.00

1.50

2.00

2.50

Figure 5. Gate-Source Current

Figure 6. Drain-Source On-resistance

IGS = f(VGS); parameter: Tj

RDS(on) = f(ID); VGS = 3.0; parameter: Tj

RDS(on), Drain-Source On-resistance
(Ω)

150oC

1.00
25oC

0.10

0.01
2.0

2.5

3.0

3.5

0.50
0.45
0.40

150oC

0.35
0.30

100oC

0.25
0.20
0.15

25oC

0.10
0.05
0.00
0

4

8

12

16

20

ID, Drain Current (A)

VGS, Gate-Source Voltage (V)

SJEP120R100A Rev1.1

3.00

VGS, Gate-Source Voltage (V)

10.00
IGS, Gate-Source Current (A)

2
4
VDS, Drain-Source Voltage (V)

Figure 3. Typical Output Characteristics
15
ID, Drain-Source Current (A)

SJEP120R100A

3/8

June 2011

Silicon Carbide
PRELIMINARY

Figure 7. Drain-Source On-resistance

Figure 8. Drain-Source On-resistance

RDS(ON) = f(Tj); parameter: IGS

RDS(ON) = f(IGS); Tj = 25oC

0.40

0.094

0.35

RDS(on), Drain-Source On-resistance
(Ω)

RDS(on), Drain-Source On-resistance (Ω)

SJEP120R100A

5mA

0.30

25mA

0.25

100mA

0.20
0.15
0.10

0.092
0.090
0.088
0.086
0.084
0.082
0.080
0.078
0.076

0.05
0

50

100

150

0.1

200

Tj, Junction Temperature (°C)

100.0

1000.0

Figure 10. Gate Charge

Qg = f(VGS); VDS = 600V; ID = 5A, Tj = 25oC

C = f(VDS); VGS = 0 V; f = 1 MHz

3.0

1.E+03

VGS, Gate-Source Voltage (V)

1.E+04

C, Capacitance (pF)

10.0

IGS, Gate-Source Current (mA)

Figure 9. Typical Capacitance

Ciss

1.E+02

Coss
Crss

1.E+01

2.5
2.0
1.5
1.0
0.5
0.0

0

300
600
900
VDS, Drain-Source Voltage (V)

1200

0

Vth = f(Tj)

30

ID = f(VDS); VGS = 0V; parameter: Tj
1E-03

-1.5mV/oC
ID, Drain Leakage Current (A)

150oC

Max

Typical

1.00

20

Figure 12. Drain-Source Leakage

1.50

1.25

10

Qg, Total Gate Charge (nC)

Figure 11. Gate Threshold Voltage

VTH, Gate Threshold Voltage (V)

1.0

0.75

1E-04
1E-05

100oC

1E-06
1E-07
25oC
1E-08
1E-09

0.50
0

50

100

Tj, Junction Temperature

SJEP120R100A Rev1.1

150

0

200

(oC)

300

600

900

1200

BVDS, Drain-Source Blocking Voltage (V)

4/8

June 2011

Silicon Carbide
PRELIMINARY

Figure 13. Switching Energy Losses

Figure 14. Switching Energy Losses

Es = f(ID); VDS = 600V; GD = +15V/-10V, RGEXT = 5ohm

Es = f(RGEXT); VDS = 600V; ID = 12A, GD = +15V/-10V

300

600
Tj = 25oC
Tj = 150oC

250
200
150

EOFF

100

EON

Tj = 25oC
Tj = 150oC

500

ETS

E, Switching Energy (uJ)

E, Switching Energy (uJ)

SJEP120R100A

50

ETS

400
EOFF

300

EON

200
100
0

0
2

6

10

14

0

18

ID, Drain Current (A)

10

20

30

40

RgEXT, External Gate Resistance, (Ω)

Figure 15. Gate Driver & Switching Test Circuit

SGDR300P1
Figure 16. Test Circuit & Test Conditions
Test Conditions

 Single Device configuration

 VDD = 600V, ILPK = 12A, TA = 25oC

 RC snubber: R= 22 and C = 4.7nF

 400uH load inductance

 Each device driven by separate SGD300P1

 Gate driver approx. 5mm from gate terminal

 3.3nF gate-source capacitive clamp

The SGDR300P1 is a gate driver reference design available for purchase from SemiSouth. See applications note AN-SS2 for full circuit
description, test results, schematics, and bill of materials. Gerber files also available upon request.

SJEP120R100A Rev1.1

5/8

June 2011

Silicon Carbide
PRELIMINARY

SJEP120R100A

Figure 17. Transient Thermal Impedance
Zth(jc) = f(tP); parameter: Duty Ratio

ZTH(jc), Transient Thermal Impedance ( oC/W)

2.0E+00
90%
70%
50%
30%

2.0E-01
10%
5%

2%

2.0E-02
1%
0.5%
0.2%

2.0E-03
1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tP, Pulse Width (s)

SJEP120R100A Rev1.1

6/8

June 2011

Silicon Carbide
PRELIMINARY

DIM
A
A1
A2
b
b1
b2
c
D
D1
D2
e
E
E1
L
L1
Q
ØP
ØP1

SJEP120R100A Rev1.1

7/8

SJEP120R100A

MILLIMETERS
MIN
MAX
4.903
5.157
2.273
2.527
1.853
2.108
1.073
1.327
2.873
3.381
1.903
2.386
0.600
0.752
20.823
21.077
17.393
17.647
1.063
1.317
5.450
15.773
16.027
13.893
14.147
20.053
20.307
4.168
4.472
6.043
6.297
3.560
3.660
7.063
7.317

INCHES
MIN
MAX
0.193
0.203
0.090
0.100
0.073
0.083
0.042
0.052
0.113
0.133
0.042
0.052
0.024
0.029
0.820
0.830
0.685
0.695
0.042
0.052
0.215
0.621
0.631
0.547
0.557
0.789
0.799
0.165
0.175
0.238
0.248
0.140
0.144
0.278
0.288

June 2011

Silicon Carbide
PRELIMINARY

SJEP120R100A

Published by
SemiSouth Laboratories, Inc.
201 Research Boulevard
Starkville, MS 39759 USA
© SemiSouth Laboratories, Inc. 2011
Information in this document supersedes and replaces all information previously supplied.

Information in this document is provided solely in connection with SemiSouth products. SemiSouth Laboratories,
Inc. reserves the right to make changes, corrections, modifications or improvements, to this document without
notice.
No license, express or implied to any intellectual property rights is granted under this document.

Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are
not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining
applications, nor in products or systems where failure or malfunction may result in personal injury, death, or
property or environmental damage.

SJEP120R100A Rev1.1

8/8

June 2011