RK7002 Transistors Interface and switching (60V, 115mA) RK7002 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(5V). ROHM : SST3 E I A J : SOT-23 Abbreviated symbol : RKM zApplication Switching (1) Source (2) Gate (3) Drain zEquivalent circuit Drain Gate ∗ Gate Protection Diode Source ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Continuous ID 115 mA Pulsed IDP∗1 800 mA Drain current 115 mA IDRP∗1 800 mA Total power dissipation PD∗2 225 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Reverse drain current ∗1 ∗2 Continuous Pulsed IDR Pw≤10µs, Duty cycle≤1% When mounted on a 1x0.75x0.062 inch glass epoxy board. Rev.A 1/3 RK7002 Transistors zElectrical characteristics (Ta=25°C) Parameter Min. Typ. Max. Unit IGSS − − ±10 µA VGS= ±20V, VDS= 0V V(BR)DSS 60 − − V ID=10µA, VGS=0V Symbol Gate-source leakage Drain-source breakdown voltage Test Conditions IDSS − − 1.0 µA VDS= 60V, VGS= 0V Gate threshold voltage VGS (th) 1.0 1.85 2.5 V VDS= 10V, ID= 1mA Static drain-source on-state resistance RDS(on) ∗ − − 7.5 − 7.5 Forward transfer admittance Yfs ∗ − 80 − − mS ID= 0.2A, VDS= 10V Input capacitance Ciss − 25 50 pF VDS= 25V Output capacitance Coss − 10 25 pF VGS= 0V Reverse transfer capacitance − 3.0 5.0 pF f= 1MHz Turn-on delay time Crss td(on)∗ − 12 20 ns ID= 0.2A, VDD Turn-off delay time td(off)∗ − 20 30 ns RL=150Ω, RG=10Ω Zero gate voltage drain current ID= 0.5A, VGS=10V Ω ID= 0.05A, VGS= 5V 30V, VGS=10V, ∗ Pw≤300µs, Duty cycle≤1% 1 0.5 5V 8V 6V 0.3 4V 0.2 0.1 VDS=10V Pulsed 0.1 0.01 Ta=−25°C 25°C 75°C 125°C VGS=3V 0 0 1 2 3 4 0.001 0 5 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=125°C 75°C 25°C −25°C 1 0.01 0.1 DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ι ) 5 100 VGS=10V Pulsed 0.1 0.001 4 6 7 1 10 2 1.5 1 0.5 0 −50 8 Ta=125°C 75°C 25°C −25°C 1 0.01 0.1 DRAIN CURRENT : ID (A) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) VGS=5V Pulsed 0.1 0.001 VDS=10V ID=1mA Pulsed 2.5 Fig.3 Gate Threshold Voltage vs. Channel Temperature Fig.2 Typical Transfer Characteristics Fig.1 Typical Output Characteristics 10 3 3 GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : VDS (V) 100 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.4 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 10V GATE THRESHOLD VOLTAGE : VGS (th) (V) zElectrical characteristic curves 1 Ta=25°C Pulsed 7 6 5 4 115mA 3 2 ID =57.5mA 1 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Rev.A 2/3 RK7002 Transistors 6 ID =115mA 3 57.5mA 2 1 0 −50 −25 0 25 50 75 0.1 Ta=125°C 75°C 25°C −25°C 0.01 0.001 0 100 125 150 CHANNEL TEMPERATURE : Tch (°C) 0.1 0.01 0.5 1.0 Ta=−25°C 25°C 75°C 125°C 1.5 0.01 0.1 0.05 0.01 0 0.5 1000 Ciss Coss 10 1.5 1 10 tf 100 td(on) 10 tr 1 0.001 100 Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed td(off) 0.01 0.1 1 DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Reverse Drain Current vs. Source-Drain Voltage (ΙΙ) 1.0 Fig.9 Reverse Drain Current vs. Source-Drain Voltage (ΙΙ) 100 DRAIN CURRENT : ID (A) 0V 0.1 Fig.8 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) Ta=25°C VGS=0V f=1MHz Pulsed 1 0.1 1 VGS=10V SOURCE-DRAIN VOLTAGE : VSD (V) Crss 0.001 0.001 Ta=25°C Pulsed 0.5 SOURCE-DRAIN VOLTAGE : VSD (V) 1000 CAPACITANCE : C (pF) FORWARD TRANSFER ADMITTANCE : Yfs (S) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature VGS=10V Pulsed REVERSE DRAIN CURRENT : IDR (A) 4 VGS=0V Pulsed SWITCHING TIME : t (ns) REVERSE DRAIN CURRENT : IDR (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 5 1 1 1 VGS=10V Pulsed Fig.12 Switching Characteristics (See Figure. 13 and 14 for measurement circuits) Fig.11 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuit Pulse Width VGS RG ID D.U.T. VDS RL VGS 90% 50% 10% 50% 10% VDS 10% VDD 90% 90% tr td(on) ton Fig.13 Switching Time Test Circuit td(off) tf toff Fig.14 Switching Time Waveforms Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 www.s-manuals.com