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March 1998

FDN338P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description

Features

TM

SuperSOT -3 P-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for
low voltage applications in notebook computers, portable
phones, PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are needed
in a very small outline surface mount package.

SuperSOTTM-3

SuperSOTTM-8

SuperSOTTM-6

-1.6 A, -20 V, RDS(ON) = 0.13 Ω @ VGS = -4.5 V
RDS(ON) = 0.18 Ω @ VGS = -2.5 V.
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.

SO-8

SOIC-16

SOT-223

D

D

8
33
S

Absolute Maximum Ratings
Symbol

G

G

TM

SuperSOT -3

S

TA = 25oC unless other wise noted

Parameter

FDN338P

Units

VDSS

Drain-Source Voltage

-20

V

VGSS

Gate-Source Voltage - Continuous

±8

V

ID

Drain/Output Current - Continuous

-1.6

A

PD

Maximum Power Dissipation

- Pulsed

-5
(Note 1a)
(Note 1b)

TJ,TSTG

Operating and Storage Temperature Range

0.5

W

0.46
-55 to 150

°C

THERMAL CHARACTERISTICS
RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

© 1998 Fairchild Semiconductor Corporation

FDN338P Rev.D

Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol

Parameter

Conditions

Min

-20

Typ

Max

Units

OFF CHARACTERISTICS
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 µA

∆BVDSS/∆TJ

Breakdown Voltage Temp. Coefficient

ID = -250 µA, Referenced to 25 oC

V

IDSS

Zero Gate Voltage Drain Current

VDS = -16 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

VGS = 8 V,VDS = 0 V

IGSSR

Gate - Body Leakage, Reverse

VGS = -8 V, VDS = 0 V

-100

nA

TJ = 55°C

ON CHARACTERISTICS

mV/ oC

-28
-1

µA

-10

µA

100

nA

(Note)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = -250 µA

∆VGS(th)/∆TJ

Gate Threshold Voltage Temp. Coefficient

ID = -250 µA, Referenced to 25 oC

-0.4

RDS(ON)

Static Drain-Source On-Resistance

VGS = -4.5 V, ID = -1.6 A
VGS = -2.5 V, ID = -1.3 A

On-State Drain Current

VGS = -4.5 V, VDS = -5 V

gFS

Forward Transconductance

VDS = -5 V, ID = -1.6 A

-1

V
mV/ oC

2

TJ =125°C
ID(ON)

-0.6

0.115

0.13

0.16

0.22

0.155

0.18

-2.5

Ω

A
3

S

405

pF

170

pF

45

pF

DYNAMIC CHARACTERISTICS
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS
tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS = -10 V, VGS = 0 V,
f = 1.0 MHz

(Note)

VDD = -5 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ω

VDS = -5 V, ID = -1.6 A,
VGS = -4.5 V

6.5

13

ns

20

35

ns

31

50

ns

21

35

ns

6

8.5

nC

0.8

nC

1.3

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = -0.42 A

(Note)

-0.7

-0.42

A

-1.2

V

Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment :

a. 250oC/W when mounted on
0.02 in2 pad of 2oz Cu.

a

b. 270oC/W when mounted on
a 0.001 in2 pad of 2oz Cu.

Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDN338P Rev.D

Typical Electrical Characteristics

8

-3.0
-2.5

RDS(ON) , NORMALIZED

-I D , DRAIN-SOURCE CURRENT (A)

VGS = -4.5V
-4.0
-3.5

6

-2.0
4

2

0

-1.5

DRAIN-SOURCE ON-RESISTANCE

2

10

1.8

1

2

3

4

-2.5

1.4

-3.0
1.2

-3.5
-4.0

5

0

2

4

Figure 1. On-Region Characteristics.

R DS(ON),ON-RESISTANCE(OHM)

V GS = -4.5V

1.2

1

0.8

0.6
-50

-25

0

25

50

75

100

125

I D = -0.8A
0.4

0.3

TJ = 125°C
0.2

25°C

0.1

0

150

1

2

TJ , JUNCTION TEMPERATURE (°C)

-V

GS

10

VDS = -5V

TA = -55°C

8

25°C
125°C

6

4

2

1

2

3

-VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

4

5

10

VGS = 0V
1

4

TJ = 125°C

0.1

25°C
-55°C

0.01

0.001

0.0001
0

3

,GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.

Figure 3. On-Resistance Variation
with Temperature.

0

10

0.5

I D = -1.6A

-I S , REVERSE DRAIN CURRENT (A)

RDS(ON) , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

8

Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.

1.6

-I D , DRAIN CURRENT (A)

6

-I D , DRAIN CURRENT (A)

-VDS , DRAIN-SOURCE VOLTAGE (V)

1.4

-4.5

1
0.8

0

VGS = -2.0V

1.6

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.

FDN338P Rev.D

Typical Electrical Characteristics
1000

I D = -1.6A

600

V DS= -5V

4

CAPACITANCE (pF)

-V GS , GATE-SOURCE VOLTAGE (V)

5

-15V
3

2

Ciss

400
200

Coss

100
50

0

0

2

4

6

20
0.1

8

0.2

0.5

1

2

5

10

20

-VDS , DRAIN TO SOURCE VOLTAGE (V)

Q g , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

10

50

5
RD

S(

ON

)

LIM

1m
10 s
ms

IT

1
0.5

1s
10s

DC

VGS = -4.5V
SINGLE PULSE
RθJA =250°C/W
T
A A = 25°C

0.1
0.05

0.01
0.1

0.2

0.5
DS

30

20

10

1

-V

SINGLE PULSE
R θJA =250° C/W
TA = 25°C

40

10
0m
s

POWER (W)

2

2

5

10

20

0
0.0001

40

0.001

0.01

0.1

1

10

100 300

SINGLE PULSE TIME (SEC)

, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Single Pulse Maximum Power
Dissipation.

Figure 9. Maximum Safe Operating Area.

1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE

-I D, DRAIN CURRENT (A)

Crss

f = 1 MHz
V GS = 0 V

1

0.5

D = 0.5

0.2
0.1
0.05
0.02
0.01

R θJA (t) = r(t) * RθJA
R θJA = 250 °C/W

0.2
0.1
0.05

P(pk)

0.02
0.01

t1

Single Pulse

Duty Cycle, D = t1 /t2

0.002
0.001
0.0001

t2

TJ - TA = P * RθJA (t)

0.005

0.001

0.01

0.1

1

10

100

300

t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve.

FDN338P Rev.D