LM118-N, LM218-N, LM318-N
www.ti.com

SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

LM118-N/lm218-N/LM318-N Operational Amplifiers
Check for Samples: LM118-N, LM218-N, LM318-N

FEATURES

DESCRIPTION

•
•
•
•
•
•
•

The LM118 series are precision high speed
operational amplifiers designed for applications
requiring wide bandwidth and high slew rate. They
feature a factor of ten increase in speed over general
purpose devices without sacrificing DC performance.

1

2

15 MHz Small Signal Bandwidth
Ensured 50V/μs Slew Rate
Maximum Bias Current of 250 nA
Operates from Supplies of ±5V to ±20V
Internal Frequency Compensation
Input and Output Overload Protected
Pin Compatible with General Purpose Op
Amps

The LM118 series has internal unity gain frequency
compensation. This considerably simplifies its
application since no external components are
necessary for operation. However, unlike most
internally compensated amplifiers, external frequency
compensation may be added for optimum
performance. For inverting applications, feedforward
compensation will boost the slew rate to over
150V/μs and almost double the bandwidth.
Overcompensation can be used with the amplifier for
greater stability when maximum bandwidth is not
needed. Further, a single capacitor can be added to
reduce the 0.1% settling time to under 1 μs.
The high speed and fast settling time of these op
amps make them useful in A/D converters, oscillators,
active filters, sample and hold circuits, or general
purpose amplifiers. These devices are easy to apply
and offer an order of magnitude better AC
performance than industry standards such as the
LM709.
The LM218-N is identical to the LM118 except that
the LM218-N has its performance specified over a
−25°C to +85°C temperature range. The LM318-N is
specified from 0°C to +70°C.

Fast Voltage Follower

Do not hard-wire as voltage follower (R1 ≥ 5 kΩ)
1

2

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Copyright © 1998–2013, Texas Instruments Incorporated

LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings (1) (2)
Supply Voltage

±20V

Power Dissipation

(3)

Differential Input Current
Input Voltage

500 mW
(4)

±10 mA

(5)

±15V

Output Short-Circuit Duration

Continuous

Operating Temperature Range
lm118-n

−55°C to +125°C

LM218-N

−25°C to +85°C

LM318-N

0°C to +70°C
−65°C to +150°C

Storage Temperature Range
Lead Temperature (Soldering, 10 sec.)
TO-99 Package

300°C

PDIP Package

260°C

Soldering Information
Dual-In-Line Package
Soldering (10 sec.)

260°C

SOIC Package
Vapor Phase (60 sec.)

215°C

Infrared (15 sec.)

220°C

ESD Tolerance
(1)
(2)
(3)
(4)
(5)
(6)

(6)

2000V

Refer to RETS118X for LM118H and LM118J military specifications.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
The maximum junction temperature of the lm118-n is 150°C, the LM218-N is 110°C, and the LM318-N is 110°C. For operating at
elevated temperatures, devices in the LMC package must be derated based on a thermal resistance of 160°C/W, junction to ambient, or
20°C/W, junction to case. The thermal resistance of the dual-in-line package is 100°C/W, junction to ambient.
The inputs are shunted with back-to-back diodes for overvoltage protection. Therefore, excessive current will flow if a differential input
voltage in excess of 1V is applied between the inputs unless some limiting resistance is used.
For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.
Human body model, 1.5 kΩ in series with 100 pF.

Electrical Characteristics

(1)

Parameter

Conditions

LM118-N/LM218-N
Min

Typ

Max

2

4

LM318-N
Min

Units

Typ

Max

4

10

mV
nA

Input Offset Voltage

TA = 25°C

Input Offset Current

TA = 25°C

6

50

30

200

Input Bias Current

TA = 25°C

120

250

150

500

Input Resistance

TA = 25°C

Supply Current

TA = 25°C

Large Signal Voltage Gain

TA = 25°C, VS = ±15V

1

3

50

50

nA

0.5

3

200

25

200

V/mV

70

50

70

V/μs

5

8

5

MΩ
10

mA

VOUT = ±10V, RL ≥ 2 kΩ
Slew Rate

TA = 25°C, VS = ±15V, AV = 1

Small Signal Bandwidth

TA = 25°C, VS = ±15V

(2)

15

15

MHz

Input Offset Voltage

6

15

mV

Input Offset Current

100

300

nA

(1)
(2)
2

These specifications apply for ±5V ≤ VS ≤ ±20V and −55°C ≤ TA ≤ +125°C (lm118-n), −25°C ≤ TA ≤ +85°C (LM218-N), and 0°C ≤ TA ≤
+70°C (LM318-N). Also, power supplies must be bypassed with 0.1 μF disc capacitors.
Slew rate is tested with VS = ±15V. The lm118-n is in a unity-gain non-inverting configuration. VIN is stepped from −7.5V to +7.5V and
vice versa. The slew rates between −5.0V and +5.0V and vice versa are tested and specified to exceed 50V/μs.
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Copyright © 1998–2013, Texas Instruments Incorporated

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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

Electrical Characteristics (1) (continued)
Parameter

Conditions

LM118-N/LM218-N
Min

Typ

Input Bias Current

Max

LM318-N
Min

Typ

500

Supply Current

TA = 125°C

Large Signal Voltage Gain

VS = ±15V, VOUT = ±10V

4.5
25

Units
Max
750

7

nA
mA

20

V/mV

RL ≥ 2 kΩ
Output Voltage Swing

VS = ±15V, RL = 2 kΩ

Input Voltage Range

VS = ±15V

±12

±13

±11.5

±12

±13

±11.
5

V
V

Common-Mode Rejection Ratio

80

100

70

100

dB

Supply Voltage Rejection Ratio

70

80

65

80

dB

Copyright © 1998–2013, Texas Instruments Incorporated

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TYPICAL PERFORMANCE CHARACTERISTICS
LM118-N, LM218-N

4

Input Current

Voltage Gain

Figure 1.

Figure 2.

Power Supply Rejection

Input Noise Voltage

Figure 3.

Figure 4.

Common Mode Rejection

Supply Current

Figure 5.

Figure 6.

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Product Folder Links: LM118-N LM218-N LM318-N

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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

TYPICAL PERFORMANCE CHARACTERISTICS (continued)
LM118-N, LM218-N
Closed Loop Output
Impedance

Current Limiting

Figure 7.

Figure 8.

Input Current

Unity Gain Bandwidth

Figure 9.

Figure 10.

Voltage Follower Slew Rate

Inverter Settling Time

Figure 11.

Figure 12.

Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LM118-N LM218-N LM318-N

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LM118-N, LM218-N, LM318-N
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
LM118-N, LM218-N

6

Large Signal Frequency Response

Open Loop Frequency Response

Figure 13.

Figure 14.

Voltage Follower Pulse Response

Large Signal Frequency Response

Figure 15.

Figure 16.

Open Loop Frequency Response

Inverter Pulse Response

Figure 17.

Figure 18.

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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

Typical Performance Characteristics
LM318-N
Input Current

Voltage Gain

Figure 19.

Figure 20.

Power Supply Rejection

Input Noise Voltage

Figure 21.

Figure 22.

Common Mode Rejection

Supply Current

Figure 23.

Figure 24.

Copyright © 1998–2013, Texas Instruments Incorporated

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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

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Typical Performance Characteristics (continued)
LM318-N

8

Closed Loop Output Impedance

Current Limiting

Figure 25.

Figure 26.

Input Current

Unity Gain Bandwidth

Figure 27.

Figure 28.

Voltage Follower Slew Rate

Inverter Settling Time

Figure 29.

Figure 30.

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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

Typical Performance Characteristics (continued)
LM318-N
Large Signal Frequency Response

Open Loop Frequency Response

Figure 31.

Figure 32.

Voltage Follower Pulse Response

Large Signal Frequency Response

Figure 33.

Figure 34.

Open Loop Frequency Response

Inverter Pulse Response

Figure 35.

Figure 36.

Copyright © 1998–2013, Texas Instruments Incorporated

Product Folder Links: LM118-N LM218-N LM318-N

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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

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AUXILIARY CIRCUITS

Figure 39. Offset Balancing

*Balance circuit necessary for increased
slew.
Slew rate typically 150V/μs.

Figure 37. Feedforward Compensation
for Greater Inverting Slew Rate

Figure 40. Isolating Large Capacitive Loads

Slew and settling time to 0.1% for a 10V
step change is 800 ns.

Figure 41. Overcompensation

Figure 38. Compensation for Minimum Settling
Time

10

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LM118-N, LM218-N, LM318-N
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

TYPICAL APPLICATIONS

Do not hard-wire as voltage follower (R1 ≥ 5 kΩ)

Figure 42. Fast Voltage Follower

CF = Large
(CF ≥ 50 pF)
*Do not hard-wire as integrator or slow inverter; insert a 10k-5 pF network in series with the input, to prevent
oscillation.
Do not hard-wire as voltage follower (R1 ≥ 5 kΩ)

Figure 43.

Figure 44. Fast Summing Amplifier

Figure 45. Differential Amplifie

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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

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Figure 46. Fast Sample and Hold

*Optional—Reduces settling time.

Figure 47. D/A Converter Using Ladder Network

12

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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

ΔOutput zero.
*“Y” zero
+“X” zero
‡Full scale adjust.

Figure 48. Four Quadrant Multiplier

*Optional—Reduces settling time.

Figure 49. D/A Converter Using Binary Weighted Network

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Product Folder Links: LM118-N LM218-N LM318-N

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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

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Figure 50. Fast Summing Amplifier with Low Input Current

Figure 51. Wein Bridge Sine Wave Oscillator

Figure 52. Instrumentation Amplifier

14

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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

Schematic Diagram

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LM118-N, LM218-N, LM318-N
SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

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Pin Diagram

Available per JM38510/10107.

Dual-In-Line Package
(Top View)
See Package Number J (R-GDIP-T14)

Available per JM38510/10107.

Dual-In-Line Package
(Top View)
See Package Number NAB008A, D (R-PDSO-G8),
or P (R-PDIP-T8)

Pin connections shown on schematic diagram and typical applications are for TO-99 package.

TO-99 Package
(Top View)
See Package Number LMC (O-MBCY-W8)

16

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LM118-N, LM218-N, LM318-N
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SNOSBS8C – MARCH 1998 – REVISED MARCH 2013

REVISION HISTORY
Changes from Revision B (March 2013) to Revision C
•

Page

Changed layout of National Data Sheet to TI format .......................................................................................................... 16

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PACKAGE OPTION ADDENDUM

www.ti.com

14-Jun-2017

PACKAGING INFORMATION
Orderable Device

Status
(1)

Package Type Package Pins Package
Drawing
Qty

Eco Plan

Lead/Ball Finish

MSL Peak Temp

(2)

(6)

(3)

Op Temp (°C)

Device Marking
(4/5)

LM118H

ACTIVE

TO-99

LMC

8

500

TBD

Call TI

Call TI

-55 to 125

( LM118H ~ LM118H)

LM118H/NOPB

ACTIVE

TO-99

LMC

8

500

Green (RoHS
& no Sb/Br)

Call TI

Level-1-NA-UNLIM

-55 to 125

( LM118H ~ LM118H)

LM318M

NRND

SOIC

D

8

95

TBD

Call TI

Call TI

0 to 70

LM
318M

LM318M/NOPB

ACTIVE

SOIC

D

8

95

Green (RoHS
& no Sb/Br)

CU SN

Level-1-260C-UNLIM

0 to 70

LM
318M

LM318MX/NOPB

ACTIVE

SOIC

D

8

2500

Green (RoHS
& no Sb/Br)

CU SN

Level-1-260C-UNLIM

0 to 70

LM
318M

LM318N/NOPB

ACTIVE

PDIP

P

8

40

Green (RoHS
& no Sb/Br)

CU SN

Level-1-NA-UNLIM

0 to 70

LM
318N

(1)

The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)

RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)

MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)

Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1

Samples

PACKAGE OPTION ADDENDUM

www.ti.com

14-Jun-2017

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION
www.ti.com

23-Sep-2013

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

LM318MX/NOPB

Package Package Pins
Type Drawing
SOIC

D

8

SPQ

Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)

2500

330.0

12.4

Pack Materials-Page 1

6.5

B0
(mm)

K0
(mm)

P1
(mm)

5.4

2.0

8.0

W
Pin1
(mm) Quadrant
12.0

Q1

PACKAGE MATERIALS INFORMATION
www.ti.com

23-Sep-2013

*All dimensions are nominal

Device

Package Type

Package Drawing

Pins

SPQ

Length (mm)

Width (mm)

Height (mm)

LM318MX/NOPB

SOIC

D

8

2500

367.0

367.0

35.0

Pack Materials-Page 2

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