EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A zExternal dimensions (Units : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD6 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA143T chip and DTC143T chip in an EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT6 2.0 1.3 (3) (2) (1) 1.25 0.65 (6) (5) 0.2 (4) UMD6N 0.65 Abbreviated symbol : D6 zStructure A PNP and NPN digital transistor (each with a single built in resistor) 0to0.1 0.7 0.15 0.1Min. 0.9 2.1 The following characteristics apply to both the DTr1 and DTr2, however, the “ −” sign on DTr2 values for the PNP type have been omitted. Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 zEquivalent circuit Abbreviated symbol : D6 IMD6A IMD6A (4) R1 (5) (3) (6) R1 (2) R1=4.7kΩ (1) (1) (3) (4) DTr2 R1=4.7kΩ (2) DTr1 DTr1 DTr2 0.95 0.95 1.9 2.9 (6) (6) (4) (5) R1 (1) (5) (3) (2) R1 0.3 EMD6 / UMD6N 1.6 0.3to0.6 zAbsolute maximum ratings (Ta = 25°C) Symbol Limits Unit VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector EMD6, UMD6N power dissipation IMD6A PC 150 (TOTAL) 1.1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Collector-base voltage Parameter 0to0.1 0.8 0.15 2.8 mW 300 (TOTAL) Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C Abbreviated symbol : D6 ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Rev.A 1/2 EMD6 / UMD6N / IMD6A Transistors zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Parameter Conditions Collector-base breakdown voltage BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=50V Emitter cutoff current IEBO − − 0.5 µA VEB=4V Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance VCE (sat) − − 0.3 V IC/IB=5mA/0.25mA hFE 100 250 600 − VCE=5V, IC=1mA fT − 250 − R1 3.29 4.7 6.11 ∗ MHz VCE=10V, IE=−5mA, f=100MHz − kΩ ∗ Transition frequency of the transistor zPackaging specifications Package Type Taping Code T2R TR T108 Basic ordering unit (pieces) 8000 3000 3000 EMD6 UMD6N IMD6A 1k VCE=5V DC CURRENT GAIN : hFE 500 200 Ta=100˚C 25˚C −40˚C 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) zElectrical characteristic curves DTr1 (NPN) 1 200m Ta=100˚C 25˚C −40˚C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Fig.1 DC current gain vs. collector current lC/lB=20 500m Collector-emitter saturation voltage vs. collector current 1k VCE=−5V DC CURRENT GAIN : hFE 500 50 −1 −500m −200m 200 100 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DTr2 (PNP) −100m Ta=100˚C 25˚C −40˚C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m lC/lB=20 Ta=100˚C 25˚C −40˚C −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.4 Collector-emitter saturation voltage vs. collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 www.s-manuals.com