March 1999

FDV301N
Digital FET , N-Channel
General Description

Features

This N-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one N-channel FET can
replace several different digital transistors, with different bias
resistor values.

25 V, 0.22 A continuous, 0.5 A Peak.
RDS(ON) = 5 Ω @ VGS= 2.7 V
RDS(ON) = 4 Ω @ VGS= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS
FET.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOIC-16

SOT-223

Mark:301
INVERTER APPLICATION

Vcc

D
D

OUT

IN

G

Absolute Maximum Ratings
Symbol

G

S
GND

S

TA = 25oC unless other wise noted

Parameter

FDV301N

Units

VDSS, VCC

Drain-Source Voltage, Power Supply Voltage

25

V

VGSS, VI

Gate-Source Voltage, VIN

8

V

ID, IO

Drain/Output Current

0.22

A

- Continuous

0.5
PD

Maximum Power Dissipation

TJ,TSTG

Operating and Storage Temperature Range

ESD

Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)

0.35

W

-55 to 150

°C

6.0

kV

357

°C/W

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient

© 1999 Fairchild Semiconductor Corporation

FDV301N Rev.F

Inverter Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol

Parameter

Conditions

Max

Units

IO (off)

Zero Input Voltage Output Current

VCC = 20 V, VI = 0 V

1

µA

VI (off)

Input Voltage

VCC = 5 V, IO = 10 µA

0.5

V

VI (on)
RO (on)

Min

VO = 0.3 V, IO = 0.005 A
Output to Ground Resistance

Typ

1

VI = 2.7 V, IO = 0.2 A

V
4

5

Ω

Typ

Max

Units

Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol

Parameter

Conditions

Min

25

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

∆BVDSS/∆TJ

Breakdown Voltage Temp. Coefficient

ID = 250 µA, Referenced to 25 o C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

IGSS

Gate - Body Leakage Current

VGS = 8 V, VDS= 0 V

V

TJ = 55°C
ON CHARACTERISTICS

mV / oC

25
1

µA

10

µA

100

nA

(Note)

∆VGS(th)/∆TJ

Gate Threshold Voltage Temp. Coefficient

ID = 250 µA, Referenced to 25 o C

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS(ON)

Static Drain-Source On-Resistance

VGS = 2.7 V, ID = 0.2 A

mV / oC

-2.1
0.65

TJ =125°C
VGS = 4.5 V, ID = 0.4 A

0.85

1.5

V

3.8

5

Ω

6.3

9

3.1

4

ID(ON)

On-State Drain Current

VGS = 2.7 V, VDS = 5 V

gFS

Forward Transconductance

VDS = 5 V, ID= 0.4 A

0.2
0.2

A
S

VDS = 10 V, VGS = 0 V,
f = 1.0 MHz

9.5

pF

6

pF

1.3

pF

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

(Note)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 6 V, ID = 0.5 A,
VGS = 4.5 V, RGEN = 50 Ω

VDS = 5 V, ID = 0.2 A,
VGS = 4.5 V

3.2

8

ns

6

15

ns

3.5

8

ns

3.5

8

ns

0.49

0.7

nC

0.22

nC

0.07

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 0.29 A

(Note)

0.8

0.29

A

1.2

V

Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDV301N Rev.F

Typical Electrical Characteristics
1 .4

0 .5
GS

= 4.5V

4 .0
3 .5
3 .0

0 .4

R DS(on ) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

I D , DRAIN-SOURCE CURRENT (A)

V

2 .7
2 .5

0 .3

0 .2

2 .0

0 .1

1 .5

VGS = 2 .0V
1 .2

2 .5
2 .7

1

3 .0
3 .5
4 .0

0 .8

4 .5

0 .6

0
0

0 .5
V

DS

1
1 .5
2
, DRAIN-SOURCE VOLTAGE (V)

2 .5

0

3

0 .4

0 .5

15

R DS(on) , ON-RESISTANCE (OHM)

1.8
R DS(ON) , NORMALIZED

0 .2
0 .3
I D , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.

Figure 1. On-Region Characteristics.

DRAIN-SOURCE ON-RESISTANCE

0 .1

I D = 0.2A

1.6

VGS = 2.7 V

1.4
1.2
1
0.8

ID = 0.2A
12

25°C

125°C

9

6

3

0

0.6
-50

2

-25

0

25

50

75

100

125

2.5

150

TJ , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation

0.5

V GS = 0V
0.2
I S, REVERSE DRAIN CURRENT (A)

I D , DRAIN CURRENT (A)

125°C
0 .1 5

0 .1

0 .0 5

0
0 .5

1
V

GS

1 .5
2
, GATE TO SOURCE VOLTAGE (V)

4

Gate-To-Source Voltage.

T = -55°C
J
25°C

V DS = 5.0V

3.5

Figure 4. On Resistance Variation with

with Temperature.

0 .2

3

V GS , GATE TO SOURCE VOLTAGE (V)

2 .5

TJ = 125°C

0.1

25°C
0.01

-55°C

0.001

0.0001
0.2

0.4
0.6
0.8
1
V
, BODY DIODE FORW A RD VOLTAGE (V)

1.2

SD

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature.

FDV301N Rev.F

Typical Electrical And Thermal Characteristics
30

VDS = 5V

I D = 0.2A

20

10V

4

15V
CAPACITANCE (pF)

V GS , GATE-SOURCE VOLTAGE (V)

5

3

2

C iss

10

C oss

5
3
2

1

f = 1 MHz
V GS = 0V

1
0 .1

0
0

0.1

0.2

0.3

0.4

0.5

C rss
0 .5
1
2
5
V
, DRAIN TO SOURCE VOLTAGE (V)
DS

0.6

10

25

Q g , GATE CHARGE (nC)

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

1

5

(
DS

ON

)L

IM

1m

IT

10

0m

s

1s

0 .1

10

0 .0 5

VGS = 2.7V

0 .0 2

RθJ A = 357 °C/ W
TA = 25°C

s

3

2

DC

SINGLE PULSE

0 .0 1
0 .5

1
V

DS

SINGLE PULSE
R θJA =357° C/W
T A = 25°C

4

s
POWER (W)

R

0 .2

D

I , DRAIN CURRENT (A)

0 .5

1

2
5
10
15
, DRAI N -SOURCE VOLTAGE (V)

25

35

0
0.001

0.01

0.1

1

10

100

300

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power
Dissipation.

1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE

0.5

D = 0.5

0.2

0 .2

0.1

0 .1

0.05
0.02
0.01
0.005

R θJA (t) = r(t) * R θJA
R θJA = 357 °C/W

0 .05
P(pk)

0 .02
0.01

t1

Single Pulse

=P * R
(t)
A
θJA
Duty Cycle, D = t1 /t2

0.002
0.001
0.0001

t2

TJ - T

0.001

0.01

0.1
t1 , TIM E (sec)

1

10

100

300

Figure 11. Transient Thermal Response Curve.

FDV301N Rev.F

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™

ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™

UHC™
VCX™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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