STD1703L
N-CHANNEL 30V - 0.038Ω - 17A - DPAK
STripFET™ II MOSFET
TYPE
STD1703L
■
■

VDSS

RDS(on)

ID

30 V

<0.05 Ω

17 A

TYPICAL RDS(on) = 0.038 Ω
APPLICATION ORIENTED
CHARACTERIZATION

3
1

DPAK

DESCRIPTION
This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
■ DC-DC CONVERTERS
■ LINEAR POST REGULATION

ORDERING INFORMATION
SALES TYPE

MARKING

PACKAGE

PACKAGING

STD1703LT4

D1703L

DPAK

TAPE & REEL

April 2004

1/10

STD1703L

ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS

Parameter

Value

Unit

Drain-source Voltage (VGS = 0)

30

V

Drain-gate Voltage (RGS = 20 kΩ)

30

V

± 20

V

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

17

A

ID

Drain Current (continuous) at TC = 100°C

12

A

IDM (
)
PTOT

Drain Current (pulsed)

68

A

Total Dissipation at TC = 25°C

20

W

0.13

W/°C

Derating Factor
dv/dt (1)

Peak Diode Recovery voltage slope

EAS (2)

Single Pulse Avalanche Energy

Tstg
Tj

Storage Temperature
Max. Operating Junction Temperature

6

V/ns

200

mJ

–65 to 175

°C

175

°C

(● ) Pulse width limited by safe operating area
(1) ISD ≤17A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
(2) Starting Tj=25°C, ID=11A, VDD=15V

THERMAL DATA
Rthj-case

Thermal Resistance Junction-case Max

7.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

275

°C

Tl

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS

Parameter
Drain-source
Breakdown Voltage

Test Conditions
ID= 250 µA, VGS= 0

Min.

Typ.

30

Unit
V

VDS= Max Rating
Zero Gate Voltage
Drain Current (VGS = 0)
VDS= Max Rating, TC= 125°C
Gate-body Leakage
Current (VDS = 0)

Max.

1

µA

10

µA

±100

nA

Typ.

Max.

Unit

VGS = 10V, ID = 8.5 A

0.038

0.05

Ω

VGS = 5 V, ID = 8.5 A

0.045

0.06

Ω

Typ.

Max.

Unit

VGS = ± 15V

ON (1)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On
Resistance

Min.
1

V

DYNAMIC
Symbol
gfs (1)

2/10

Parameter

Test Conditions

Forward Transconductance VDS > ID(on) x RDS(on)max,
ID =11A
VDS= 25V, f= 1 MHz, VGS= 0

Min.

7

S

330

pF

Ciss

Input Capacitance

Coss

Output Capacitance

90

pF

Crss

Reverse Transfer
Capacitance

40

pF

STD1703L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

11

ns

Rise Time

VDD = 15V, ID = 8.5A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)

100

ns

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD = 24V, ID = 17A,
VGS = 10V

6.5
3.6
2

9

nC
nC
nC

Typ.

Max.

Unit

Turn-on Delay Time

SWITCHING OFF
Symbol

Parameter

Test Conditions

Min.

td(off)
tf

Turn-off-Delay Time
Fall Time

VDD = 15V, ID = 8.5A,
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)

25
22

ns
ns

tr(off)
tf
tc

Off-voltage Rise Time
Fall Time
Cross-over Time

Vclamp =24V, ID =17A
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 5)

22
55
75

ns
ns
ns

SOURCE DRAIN DIODE
Symbol
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM

Parameter

Test Conditions

Min.

Typ.

Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage

ISD = 17A, VGS = 0

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

ISD = 17A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)

Max.

Unit

17

A

68

A

1.5
30
18
1.2

V
ns
nC
A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedence

3/10

STD1703L
Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/10

STD1703L
Normalized Gate Thereshold Voltage vs Temp.

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/10

STD1703L
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For
Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

6/10

STD1703L

TO-252 (DPAK) MECHANICAL DATA
mm

DIM.
MIN.

TYP.

inch
MAX.

MIN.

TYP.

MAX.

A

2.20

2.40

0.087

0.094

A1

0.90

1.10

0.035

0.043

A2

0.03

0.23

0.001

0.009

B

0.64

0.90

0.025

0.035

B2

5.20

5.40

0.204

0.213

C

0.45

0.60

0.018

0.024

C2

0.48

0.60

0.019

0.024

D

6.00

6.20

0.236

0.244

E

6.40

6.60

0.252

0.260

G

4.40

4.60

0.173

0.181

H

9.35

10.10

0.368

0.398

L2
L4
V2

0.8
0.60
0

o

0.031
1.00
8

o

0.024
0

o

0.039
0o

P032P_B

7/10

STD1703L

TO-252 (DPAK) MECHANICAL DATA
mm.

inch

DIM.
MIN.

MAX.

MIN.

TYP.

MAX.

A

2.20

2.40

0.087

0.094

A1

0.00

0.127

0.00

0.005

B

1.350

1.650

0.053

0.065

b

0.50

0.70

0.020

0.028

b1

0.70

0.90

0.028

0.035

c

0.430

0.580

0.017

0.023

c1

0.430

0.580

0.017

0.023

D

6.350

6.650

0.250

0.262

D1

5.20

5.40

0.205

0.213

E

5.40

5.70

0.213

e

2.30

0.224
0.091

e1

4.50

4.70

0.177

0.185

L

9.50

9.90

0.374

0.390

L1

2.550

2.900

0.10

0.114

L2

1.40

1.780

0.055

0.070

L3

0.35

0.65

0.014

0.026

V

8/10

TYP

3.80 REF

0.150 REF

STD1703L

TO-252 (DPAK) MECHANICAL DATA

9/10

STD1703L

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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systems without express written approval of STMicroelectronics.
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