DATA SHEET
SHEET
DATA

SILICON TRANSISTOR

2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION
PACKAGE DIMENSIONS
(Units: mm)

The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.

+0.1

0.4 −0.05

2.8±0.2

FEATURES

+0.1

1.5

0.65 −0.15

3

+0.1

1

0.4 −0.05

MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

0.95

• High Power Gain

2

0.95

NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

2.9±0.2

• Low Noise and High Gain

ABSOLUTE MAXIMUM RATINGS (TA = 25 
C)

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

IC

100

mA

Total Power Dissipation

PT

200

mW

Junction Temperature

Tj

150


C

Storage Temperature

Tstg

to +150


C

65

Marking
+0.1

V

0.16 −0.06

V

12

PIN CONNECTIONS
1. Emitter
2. Base
3. Collector

0 to 0.1

20

VCEO

0.3

VCBO

Collector to Emitter Voltage

1.1 to 1.4

Collector to Base Voltage

ELECTRICAL CHARACTERISTICS (TA = 25 
C)
CHARACTERISTIC

SYMBOL

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

1.0


A

VCB = 10 V, IE = 0

Emitter Cutoff Current

IEBO

1.0


A

VEB = 1.0 V, IC = 0

DC Current Gain

hFE*

50

120

Gain Bandwidth Product

fT

7

Feed-Back Capacitance

Cre**

0.55


S21e
2

11.5

NF

1.1

Insertion Power Gain
Noise Figure

*

MIN.

300

VCE = 10 V, IC = 20 mA
GHz

1.0

2.0

VCE = 10 V, IC = 20 mA

pF

VCB = 10 V, IE = 0, f = 1.0 MHz

dB

VCE = 10 V, IC = 20 mA, f = 1.0 GHz

dB

VCE = 10 V, IC = 7 mA, f = 1.0 GHz

Pulse Measurement PW  350 
s, Duty Cycle  2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
hFE Classification
Class

R23/Q *

R24/R *

R25/S *

Marking

R23

R24

R25

hFE

50 to 100

80 to 160

125 to 250

Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan

* Old Specification / New Specification

©

1985

2SC3356
TYPICAL CHARACTERISTICS (TA = 25 
C)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

200

100

50

0

100

f = 1.0 MHz

1

0.5

0.3
0

150

0.5

1

2

5

10

TA-Ambient Temperature-°C

VCB-Collector to Base Voltage-V

DC CURRENT GAIN vs.
COLLECTOR CURRENT

INSERTION GAIN vs.
COLLECTOR CURRENT

200

20

30

15

VCE = 10 V

|S21e|2-Insertion Gain-dB

hFE-DC Current Gain

Cre-Feed-back Capacitance-pF

PT-Total Power Dissipation-mW

2
Free Air

100

50

20

10

5
VCE = 10 V
f = 1.0 GHz

10
0.5

1

5

10

0
0.5

50

IC-Collector Current-mA

1

5

10

50 70

IC-Collector Current-mA

INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY

GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT

Gmax

5.0

Gmax-Maximum Gain-dB
|S21e|2-Insertion Gain-dB

fT-Gain Bandwidth Product-MHz

10

3.0
2.0
1.0
0.5
0.3

|S21e|2

10

0.2
VCE = 10 V
0.1

0

0.5 1.0

5.0 10

IC-Collector Current-mA

2

20

30

0

VCE = 10 V
IC = 20 mA
0.1

0.2

0.4 0.6 0.81.0

f-Frequency-GHz

2

2SC3356
NOISE FIGURE vs.
COLLECTOR CURRENT

|S21e|2-Insertion Gain-dB

6
NF-Noise Figure-dB

18

VCE = 10 V
f = 1.0 GHz

5
4
3
2

15

12
6

3

NF-Noise Figure-dB

7

NOISE FIGURE, FORWARD INSERTION
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
5
f = 1.0 GHz
IC = 20 mA
4
|S21e|2
3
2
NF
1

1
0
0.5

1

5

10

50 70

0

0

IC-Collector Current-mA

2

4

6

8

10

VCE-Collector to Emitter Voltage-V

S-PARAMETER

VCE = 10 V, IC = 5 mA, ZO = 50 

f (MHz)


S11


200

0.651

400

0.467

600

0.391

800

0.360

1000
1200

 S11
69.3


S21


 S21


S12


 S12


S22


10.616

129.3

0.051

59.2

0.735

6.856

104.4

0.071

54.4

0.550

4.852

90.9

0.086

56.0

0.468

3.802

81.2

0.101

59.1

0.426

0.360

113.3
139.3
159.2
176.9

3.098

72.9

0.118

61.0

0.397

0.361

172.7

2.646

67.3

0.137

63.5

0.373

1400

0.381

160.3

2.298

59.3

0.157

63.3

0.360

1600

0.398

152.2

2.071

55.2

0.180

64.1

0.337

1800

0.423

143.3

1.836

49.0

0.203

63.7

0.320

2000

0.445

137.6

1.689

46.2

0.220

64.7

0.302

 S22
28.1
34.1
33.9
33.6
35.7
38.3
43.0
45.9
52.3
52.2

VCE = 10 V, IC = 5 mA, ZO = 50 



S11


200

0.339

400

0.258

600

0.243

 S11
107.0
147.3
167.7

f (MHz)


S21


 S21


S12


 S12


S22


16.516

108.7

0.035

66.1

0.459

8.928

92.1

0.060

71.0

0.343

6.022

83.0

0.085

71.9

0.305

800

0.242

177.0

4.633

76.2

0.109

72.2

0.284

1000

0.260

164.5

3.744

69.9

0.136

70.4

0.266

1200

0.269

157.6

3.193

65.7

0.160

69.9

0.246

1400

0.294

148.7

2.750

58.8

0.187

66.7

0.233

1600

0.314

143.1

2.479

55.5

0.212

65.2

0.208

1800

0.343

136.5

2.185

50.1

0.238

62.4

0.190

2000

0.367

131.4

2.016

47.8

0.254

61.6

0.173

 S22
36.6
32.9
29.9
29.4
31.7
35.0
40.4
43.6
50.5
48.3

3

2SC3356
S-PARAMETER

0.1
6
0.3
4

1.6

5
0.

2.0

50

0.4

4

0.

0

3.

0.6

1
0.2
9
0.2
30

O

0.8

4.0

1.0
6.0

0
1.

2.0 GHz
0.6

10

0.4

0.1

10

0

1.

5.0

1.0

E
NC
TA X
AC −J––O–
RE
–Z

)

4.0

(

0.8
0.6

E
IV
AT

0

3.

−4
0

NE
G

0.4

2.0
1.8

1.6

1.4

0

4
0.3
6
0.1

0.2

0.35
0.15
−70

1.2

3
0.3 7
0.1

−6

0.36
0.14
−80

1.0

18

0.9

32

0.8

0.

0.7

0

0.6

−5

0.

0.

5

0.
0. 31
19

0.38
0.39
0.12
0.11
−100

−90
0.37
0.13

0

−11

0.40
0.10

0.
4
0. 3
07
30

−1

0.4
1
0.0
0.4
9
0 2
−1 .08
20

S21e-FREQUENCY

0.2
8
0.2
2
−20

0.2 GHz
IC = 5 mA

0
.
2
9
0.2
1
0.3
−3
0.2 0
0
0

4

0.

0.27
0.23

IC = 20 mA

−10

IC = 5 mA
0.2 GHz

8

0.

0.26
0.24

S22e

0.6

0.2

CONDITION

50

0.4

0.1

0.3

20

10

5.0

4.0

3.0

1.8
2.0

1.6

1.4

0.7
0.8

0.6

0.5

0.4

0.3

1.2

0.2 GHz IC = 20 mA

50

0.9
1.0

)

20

(

0.25
0.25

REACTANCE COMPONENT
R
––––
0.2
ZO

0

0.2

20
0.2

0.3

0.2

0.8

S11e

0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20

( –Z–+–J–XTANCE CO
) MPO

N

T
EN

0.
18
32

0.

1.8

0.2

0.1
0.3 7
3

600

1.4

1.2

70

0
0.2 0
0.3

WAVELE
NG

1.0

0.6

12

0.15
0.35

40

THS
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.0 GENE
0.01
7
0.48
3
RA
0.4
0.02 RD LOAD
0.4
0.0TOR
3 HS TOWLAE OF REFLECTION COEFFCIENT IN
6
7
.0
DEG
0NGT ANG
4
0.4
REE
0
E
0.4
6
L
0
S
.0W4AVE −1
6
0 .0
0
5
15
0.4 5
0.4 5
50
0
−1
.0
5
0
0.
0
44
POS
.
T
0.1
N
14 0.4 6
0 06 40
E
ITIV
ON
0
ER
4
MP
0. −1
EA
CO
C

0

0.14
0.36
80

90

19
0. 31
0.

07
43
0. 0
13

0.

0.13
0.37

0.12
0.38

0.11
0.39
100

0.10
0.40
110

0.9

8
0.0 2
0.4

9
0.0
1
0.4

0.7

VCE = 10 V
200 MHz Step

0.8

S11e, S22e-FREQUENCY
CONDITION

S12e-FREQUENCY

VCE = 10 V
IC = 20 mA

CONDITION
90°

90°
120°

2.0 GHz
60°

120°

60°

VCE = 10 V
IC = 20 mA

0.2 GHz
S12e
150°

30°

S21e

30°

150°

0.2 GHz
180°

2.0 GHz 5

10

15

−150°

0° 180°

−30°

−60°

−120°
−90°

4

20

0.05

0.1

0.15

−150°

0°
0.2 0.25

−30°

−60°

−120°
−90°

2SC3356
[MEMO]

5

2SC3356
[MEMO]

6

2SC3356
[MEMO]

7

2SC3356

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a customer designated "quality assurance program" for a specific application. The recommended applications
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device before using it in a particular application.
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If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5

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