2N7000/2N7002/NDF7000A/NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description

Features

These n-channel enhancement mode field effect transistors
are produced using National’s very high cell density third
generation DMOS technology. These products have been
designed to minimize on-state resistance provide rugged
and reliable performance and fast switching. They can be
used, with a minimum of effort, in most applications requiring up to 400 mA DC and can deliver pulsed currents up to
2A. This product is particularly suited to low voltage, low
current applications, such as small servo motor controls,
power MOSFET gate drivers, and other switching applications.

Y

Y
Y
Y
Y

Efficient high density cell design approaching
(3 million/in2)
Voltage controlled small signal switch
Rugged
High saturation current
Low RDS (ON)

TL/G/11378 – 2
TL/G/11378–1

TO-92
7000 Series

TO-236 AB
(SOT-23)
7002 Series

TL/G/11378 – 3

Absolute Maximum Ratings
Symbol

Parameter

2N7000

2N7002

NDF7000A

NDS7002A

Units

VDSS

Drain-Source Voltage

60

V

VDGR

Drain-Gate Voltage (RGS s 1 MX)

60

V

VGSS

Gate-Source Voltage

g 40

V

ID

Drain CurrentÐContinuous
ÐPulsed

PD

Total Power Dissipation

@

TA e 25§ C

Derating above 25§ C
TJ, TSTG

Operating and Storage Temperature Range

TL

Maximum Lead Temperature for Soldering
Purposes, (/16* from Case for 10 Seconds

C1995 National Semiconductor Corporation

TL/G/11378

200

115

400

280

mA

500

800

2000

1500

mA

400

200

625

300

mW

3.2

1.6

5

2.4

mW/§ C

b 55 to 150

b 65 to 150

300

§C
§C

RRD-B30M115/Printed in U. S. A.

2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor

March 1993

2N7000
Electrical Characteristics TC e 25§ C unless otherwise noted
Symbol

Parameter

Conditions

Min

Typ

Max

Units

1

mA

1

mA

b 10

nA

OFF CHARACTERISTICS
BVDSS

Drain-Source Breakdown Voltage

VGS e 0V, ID e 10 mA

IDSS

Zero Gate Voltage Drain Current

VDS e 48V, VGS e 0V

IGSSF

Gate-Body Leakage, Forward

VGS e b15V, VDS e 0V

60

V

TC e 125§ C

ON CHARACTERISTICS*
VGS(th)

Gate Threshold Voltage

VDS e VGS, ID e 1 mA

rDS(ON)

Static Drain-Source
On-Resistance

VGS e 10V, ID e 0.5A

Drain-Source On-Voltage

VGS e 10V, ID e 0.5A
VGS e 4.5V, ID e 75 mA

VDS(ON)

0.8

TC e 125§ C

2.1

3

V

1.2

5

X

1.9

9

X

0.6

2.5

V

0.14

0.4

V

ID(ON)

On-State Drain Current

VGS e 4.5V, VDS e 10V

75

600

mA

gFS

Forward Transconductance

VDS e 10V, ID e 200 mA

100

320

ms

DYNAMIC CHARACTERISTICS
Ciss

Input Capacitance

VDS e 25V, VGS e 0V, f e 1.0 MHz

20

60

Coss

Output Capacitance

11

25

pF
pF

Crss

Reverse Transfer Capacitance

4

5

pF

10

ns

10

ns

SWITCHING CHARACTERISTICS*
ton

Turn-On Time

toff

Turn-Off Time

VDD e 15V, ID e 0.5V, VGS e 10V,
RG e 25X, RL e 25X

BODY-DRAIN DIODE RATINGS
IS

Maximum Continuous Drain-Source Diode Forward Current

200

mA

ISM*

Maximum Pulsed Drain-Source Diode Forward Current

500

mA

VSD*

Drain-Source Diode Forward Voltage

1.5

V

312.5

§ C/W

40

§ C/W

VGS e 0V, IS e 200 mA

THERMAL CHARACTERISTICS
RiJA

Thermal Resistance, Junction to Ambient

RiJC

Thermal Resistance, Junction to Case

*Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.

2

2N7002
Electrical Characteristics TC e 25§ C unless otherwise noted
Symbol

Parameter

Conditions

Min

Typ

Max

Units

1

mA

500

mA

100

nA

b 100

nA

OFF CHARACTERISTICS
BVDSS

Drain-Source Breakdown Voltage

VGS e 0V, ID e 10 mA

IDSS

Zero Gate Voltage Drain Current

VDS e 60V, VGS e 0V

IGSSF

Gate-Body Leakage, Forward

VGS e 20V

Gate-Body Leakage, Reverse

VGS e b20V

60

V

TC e 125§ C

IGSSR

ON CHARACTERISTICS*
VGS(th)

Gate Threshold Voltage

VDS e VGS, ID e 250 mA

rDS(ON)

Static Drain-Source
On-Resistance

VGS e 10V, ID e 0.5A

1

TC e 125§ C
VGS e 5V, ID e 50 mA
TC e 125§ C

VDS(ON)

Drain-Source On-Voltage

2.1

2.5

V

1.2

7.5

X

2

13.5

X

1.7

7.5

X

2.8

13.5

X

VGS e 10V, ID e 0.5A

0.6

3.75

V

VGS e 5V, ID e 50 mA

0.09

1.5

V

ID(ON)

On-State Drain Current

VGS e 10V, VDS t 2 VDS(ON)

gFS

Forward Transconductance

VDS t 2 VDS(ON), ID e 200 mA

500

2700

mA

80

320

ms

DYNAMIC CHARACTERISTICS
Ciss

Input Capacitance

Coss
Crss

VDS e 25V, VGS e 0V, f e 1.0 MHz

20

50

pF

Output Capacitance

11

25

pF

Reverse Transfer Capacitance

4

5

pF

20

ns

20

ns

SWITCHING CHARACTERISTICS*
tON

Turn-On Time

tOFF

Turn-Off Time

VDD e 30V, ID e 200 mA, VGS e 10V,
RGEN e 25X, RL e 150X

BODY-DRAIN DIODE RATINGS
IS

Maximum Continuous Drain-Source Diode Forward Current

115

mA

ISM

Maximum Pulsed Drain-Source Diode Forward Current

800

mA

VSD*

Drain-Source Diode Forward Voltage

1.5

V

625

§ C/W

VGS e 0V, IS e 115 mA

THERMAL CHARACTERISTICS
RiJA

Thermal Resistance, Junction to Ambient

*Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.

3

NDF7000A
Electrical Characteristics TC e 25§ C unless otherwise noted
Symbol

Parameter

Conditions

Min

Typ

Max

Units

1

mA

1

mA

b 10

nA

OFF CHARACTERISTICS
BVDSS

Drain-Source Breakdown Voltage

VGS e 0V, ID e 10 mA

IDSS

Zero Gate Voltage Drain Current

VDS e 48V, VGS e 0V

IGSSF

Gate-Body Leakage, Forward

VGS e b15V

60

V

TC e 125§ C

ON CHARACTERISTICS*
VGS(th)

Gate Threshold Voltage

VDS e VGS, ID e 1 mA

rDS(ON)

Static Drain-Source
On-Resistance

VGS e 10V, ID e 0.5A

Drain-Source On-Voltage

VGS e 10V, ID e 500 mA

0.6

1

V

VGS e 4.5V, ID e 75 mA

0.14

0.225

V

VDS(ON)

0.8

TC e 125§ C

2.1

3

V

1.2

2

X

2

3.5

X

ID(ON)

On-State Drain Current

VGS e 4.5V, VDS t 2 VDS(ON)

400

600

mA

gFS

Forward Transconductance

VDS t 2 VDS(ON), ID e 200 mA

100

320

ms

DYNAMIC CHARACTERISTICS
Ciss

Input Capacitance

VDS e 25V, VGS e 0V, f e 1.0 MHz

20

60

Coss

Output Capacitance

11

25

pF
pF

Crss

Reverse Transfer Capacitance

4

5

pF

SWITCHING CHARACTERISTICS*
ton

Turn-On Time

toff

Turn-Off Time

VDD e 15V, ID e 500 mA, VGS e 10V,
RG e 25X, RL e 25X

10

ns

10

ns

400

mA

2000

mA

1.2

V

200

§ C/W

BODY-DRAIN DIODE RATINGS
IS

Maximum Continuous Drain-Source Diode Forward Current

ISM

Maximum Pulsed Drain-Source Diode Forward Current

VSD*

Drain-Source Diode Forward Voltage

VGS e 0V, IS e 400 mA

0.88

THERMAL CHARACTERISTICS
RiJA

Thermal Resistance, Junction to Ambient

*Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.

4

NDS7002A
Electrical Characteristics TC e 25§ C unless otherwise noted
Symbol

Parameter

Conditions

Min

Typ

Max

Units

1

mA

500

mA

100

nA

b 100

nA

OFF CHARACTERISTICS
BVDSS

Drain-Source Breakdown Voltage

VGS e 0V, ID e 10 mA

IDSS

Zero Gate Voltage Drain Current

VDS e 60V, VGS e 0V

IGSSF

Gate-Body Leakage, Forward

VGS e 20V

Gate-Body Leakage, Reverse

VGS e b20V

60

V

TC e 125§ C

IGSSR

ON CHARACTERISTICS*
VGS(th)

Gate Threshold Voltage

VDS e VGS, ID e 250 mA

rDS(ON)

Static Drain-Source
On-Resistance

VGS e 10V, ID e 0.5A

1

TC e 125§ C
VGS e 5V, ID e 50 mA
TC e 125§ C

VDS(ON)

Drain-Source On-Voltage

2.1

2.5

V

1.2

2

X
X

2

3.5

1.7

3

X

2.8

5

X

VGS e 10V, ID e 500 mA

0.6

1

V

VGS e 5.0V, ID e 50 mA

0.09

0.15

V

ID(ON)

On-State Drain Current

VGS e 10V, VDS t 2 VDS(ON)

500

2700

mA

gFS

Forward Transconductance

VDS t 2 VDS(ON), ID e 200 mA

80

320

ms

DYNAMIC CHARACTERISTICS
Ciss

Input Capacitance

Coss
Crss

VDS e 25V, VGS e 0V, f e 1.0 MHz

20

50

pF

Output Capacitance

11

25

pF

Reverse Transfer Capacitance

4

5

pF

20

ns

20

ns

SWITCHING CHARACTERISTICS*
tON

Turn-On Time

tOFF

Turn-Off Time

VDD e 30V, ID e 200 mA, VGS e 10V,
RG e 25X, RL e 150X

BODY-DRAIN DIODE RATINGS
IS

Maximum Continuous Drain-Source Diode Forward Current

280

mA

ISM

Maximum Pulsed Drain-Source Diode Forward Current

1500

mA

1.2

V

417

§ C/W

VSD*

Drain-Source Diode Forward Voltage

VGS e 0V, IS e 400 mA

0.88

THERMAL CHARACTERISTICS
RiJA

Thermal Resistance, Junction to Ambient

*Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.

5

Typical Electrical Characteristics
2N7000/2N7002/NDF7000A/NDS7002A

TL/G/11378–4

TL/G/11378 – 5

FIGURE 1. On-Region Characteristics

FIGURE 2. rDS(ON) Variation
with Drain Current and Gate Voltage

TL/G/11378 – 7

TL/G/11378–6

FIGURE 4. Breakdown Voltage
Variation with Temperature

FIGURE 3. Transfer Characteristics

TL/G/11378–8

TL/G/11378 – 9

FIGURE 5. Gate Threshold Variation with Temperature

FIGURE 6. On-Resistance Variation with Temperature

6

Typical Electrical Characteristics (Continued)
2N7000/2N7002/NDF7000A/NDS7002A (Continued)

TL/G/11378 – 10

TL/G/11378 – 11

FIGURE 8. Body Diode Forward Voltage
Variation with Current and Temperature

FIGURE 7. On-Resistance vs Drain Current

TL/G/11378 – 13

TL/G/11378 – 12

FIGURE 10. Gate Charge vs Gate-Source Voltage

FIGURE 9. Capacitance vs Drain-Source Voltage

TL/G/11378 – 14

TL/G/11378 – 15

FIGURE 11. 2N7000 Safe Operating Area

FIGURE 12. 2N7002 Safe Operating Area

7

Typical Electrical Characteristics (Continued)
2N7000/2N7002/NDF7000A/NDS7002A (Continued)

TL/G/11378 – 16

TL/G/11378 – 17

FIGURE 13. NDF7000A Safe Operating Area

FIGURE 14. NDS7002A Safe Operating Area

TL/G/11378 – 18

FIGURE 15. TO-92 Transient Thermal Response

TL/G/11378 – 19

FIGURE 16. SOT-23 Transient Thermal Response

8

Physical Dimensions inches (millimeters)

TL/G/11378 – 20

TO-92

9

2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor

Physical Dimensions inches (millimeters) (Continued)

TL/G/11378 – 21

Note 1: Meets all JEDEC dimensional requirements for TO-236AB.
Note 2: Controlling dimension: millimeters.
Note 3: Available also in TO-236AA. Contact your local National Semiconductor representative for delivery and ordering information.
Note 4: Tape and reel is the standard packaging method for TO-236.

TO-236AB (SOT-23) (Notes 3, 4)

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