BAT42
BAT43

®

SMALL SIGNAL SCHOTTKY DIODES

DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic dis-

DO-35

ABSOLUTE RATINGS (limiting values)
Symbol

Parameter

Value
30

V

Forward Continuous Current

Ta = 25°C

200

mA

IFRM

Repetitive Peak Fordware Current

tp ≤ 1s
δ ≤ 0.5

500

mA

IFSM

Surge non Repetitive Forward Current*

tp = 10ms

4

A

Ptot

Power Dissipation*

Tl = 65 °C

200

mW

Tstg
Tj

Storage and Junction Temperature Range

- 65 to +150
- 65 to +125

°C
°C

TL

Maximum Temperature for Soldering during 10s at 4mm from
Case

230

°C

Value

Unit

300

°C/W

VRRM
IF

Repetitive Peak Reverse Voltage

Unit

THERMAL RESISTANCE
Symbol
Rth(j-a)

Test Conditions
Junction-ambient*

* On infinite heatsink with 4mm lead length

October 2001 - Ed: 1C

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BAT42 / BAT43
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol

Test Conditions

Min.

VBR

Tj = 25°C

IR = 100µA

V F*

Tj = 25°C

IF = 200mA

All Types

Tj = 25°C

IF = 10mA

BAT 42

Tj = 25°C

IF = 50mA

Tj = 25°C

IF = 2mA

Tj = 25°C

IF = 15mA

IR*

Typ.

Max.

30

Unit
V

1

V

0.4
0.65

BAT 43

0.26

0.33
0.45

VR = 25V

Tj = 25°C

0.5

Tj = 100°ÉC

µA

100

DYNAMIC CHARACTERISTICS
Symbol

Test Conditions
Tj = 25°C VR = 1V

f = 1MHz

trr

Tj = 25°C IF = 10mA
RL = 100Ω

IR = 10mA

h

Tj = 25°C RL = 15KΩ CL = 300pF f = 45MHz Vi = 2V

* Pulse test: tp ≤ 300µs

Typ.

Max.

7
irr = 1mA

pF
5

80

Unit

ns
%

δ < 2%.

Fig. 1: Forward current versus forward voltage at
different temperatures (typical values).

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Min.

C

Fig. 2: Forward current versus forward voltage
(typical values).

®

BAT42 / BAT43

Fig. 3: Reverse current versus junction temperature (typical values).

Fig. 4: Reverse current versus continuous reverse voltage.

Fig. 5: Capacitance C versus reverse applied
voltage VR (typical values).

®

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BAT42 / BAT43
PACKAGE MECHANICAL DATA
DO-35
REF.
C

O
/D

A

C

O
/ B

O
/D

DIMENSIONS
Millimeters

Inches

Min.

Max.

Min.

Max.

A

3.05

4.50

0.120

0.177

B

1.53

2.00

0.060

0.079

C

28.00

D

0.458

1.102
0.558

0.018

0.022

Cooling method: by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.

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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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