ST 2SC3202
NPN Silicon Epitaxial Planar Transistor
for switching and general purpose applications.
The transistor is subdivided into two groups, O and Y
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.

TO-92 Plastic Package
Weight approx. 0.19g

Absolute Maximum Ratings (T

a

= 25oC)
Symbol

Value

Unit

Collector Base Voltage

VCBO

35

V

Collector Emitter Voltage

VCEO

30

V

Emitter Base Voltage

VEBO

5

V

Collector Current

IC

500

mA

Emitter Current

IE

-500

mA

Ptot

625

mW

Junction Temperature

Tj

150

O

Storage Temperature Range

TS

-55 to +150

O

Power Dissipation

C
C

G S P FORM A IS AVAILABLE

РАДИОТЕХ-ТРЕЙД
®

Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru

ST 2SC3202
Characteristics at Tamb=25 OC
Symbol

Min.

Typ.

Max.

Unit

O

hFE

70

-

140

-

Y

hFE

120

-

240

-

O

hFE

25

-

--

--

Y

hFE

40

-

-

ICBO

-

-

0.1

µA

IEBO

-

-

0.1

µA

VCE(sat)

-

0.1

0.25

V

VBE

-

0.8

1

V

fT

-

300

-

MHz

COB

-

7.0

-

pF

DC Current Gain
at VCE=1V, IC=100mA
Current Gain Group

at VCE=6V, IC=400mA
Collector Cutoff Current
at VCB=35V
Emitter Cutoff Current
at VEB=5V
Collector Emitter Saturation Voltage
at IC=100mA, IB=10mA
Base Emitter Voltage
at VCE=1V, IC=100mA
Transition Frequency
at VCE=6V, IC=20mA
Collector Output Capacitance
at VCB=6V, f=1MHz

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.
®

(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002