2SA733 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68. TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings* Symbol TA=25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5.0 V -500 mA -55 to +150 °C IC TJ, TSTG Collector current - Continuous Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25°C unless otherwise noted Symbol Max Units Total Device Dissipation Derate above 25°C 625 5.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W PD Parameter © 2009 Fairchild Semiconductor Corporation 2SA733 Rev. A0 www.fairchildsemi.com 1 2SA733 — PNP General Purpose Amplifier September 2009 Symbol TA=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics VCBO Collector-Base Breakdown Voltage VCEO IC = -10μA, IE = 0 -60 V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 -50 V VEBO Emitter-Base Breakdown Voltage IE = -10μA, IC = 0 -5.0 V ICBO Collector Cut-off Current VCB = -60V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -100 nA On Characteristics DC Current Gain VCE = -6V, IC = -1mA 90 600 VCE(sat) Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA -15 -300 mV VBE(on) Base-Emitter On Voltage VCE = -6V, IC = -1mA -580 -680 mV Current Gain Bandwidth Product VCE = -6V, IC = -10mA 50 Cob Output Capacitance VCB = -10V, IE = 0 f = 1.0MHz 6 pF NF Noise Figure VCE = -6V, IC = -0.3mA RG = 10kΩ, f = 100Hz 20 dB hFE Small Signal Characteristics fT MHz * Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% hFE Classification Classification R Q P K hFE 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600 © 2009 Fairchild Semiconductor Corporation 2SA733 Rev. A0 www.fairchildsemi.com 2 2SA733 — PNP General Purpose Amplifier Electrical Characteristics 2SA733 — PNP General Purpose Amplifier Physical Dimension TO-92 Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation 2SA733 Rev. A0 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ ® FACT FAST® FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM® STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ ® UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: 2SA733P