DB3 DB4 SMDB3 ® DIAC FEATURES ■ ■ VBO : 32V and 40V LOW BREAKOVER CURRENT DO-35 (DB3 and DB4) DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorenscent lamp ballasts. A new surface mount version is now available in SOT-23 package, providing reduced space and compatibility with automatic pick and place equipment. 2 3 1 SOT-23 (SMDB3)* Pin 1 and 3 must be shorted together ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol ITRM Tstg Tj Parameter Repetitive peak on-state current tp = 20 µs F= 120 Hz Storage temperature range Operating junction temperature range Value Unit SMDB3 1.00 A DB3 / DB4 2.00 - 40 to + 125 °C Note: * SMDB3 indicated as Preliminary spec as product is still in development stage. October 2001 - Ed: 2B 1/5 DB3 DB4 SMDB3 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Symbol Parameter Test Conditions VBO Breakover voltage * C = 22nF ** SMDB3 DB3 DB4 Unit MIN. 28 28 35 V TYP. 32 32 40 MAX. 36 36 45 I VBO1 - VBO2 I Breakover voltage symmetry C = 22nF ** MAX. ∆V Dynamic breakover voltage * VBO and VF at 10mA MIN. 10 5 V VO Output voltage * see diagram 2 (R=20Ω) MIN. 10 5 V IBO Breakover current * C = 22nF ** MAX. 10 50 µA see diagram 3 MAX. 0.50 2 µs VR = 0.5 VBO max MAX. 1 10 µA see diagram 2 (Gate) MIN. 1 0.30 A tr Rise time * IR Leakage current * IP Peak current * 3 V * Applicable to both forward and reverse directions. ** Connected in parallel to the device. PRODUCT SELECTOR VBO Package SMDB3 28 - 36 SOT-23 DB3 28 - 36 DO-35 DB4 35 - 45 DO-35 Part Number ORDERING INFORMATION SM DB 3 Surface Mount Version Breakover voltage 3: VBO typ = 32V 4: VBO typ = 40V Diac Series 2/5 DB3 DB4 SMDB3 OTHER INFORMATION Part Number Marking Weight Base Quantity Packing Mode SMDB3 DB3 0.01 g 3000 Tape & Reel DB3 DB3 (Blue Body Coat) 0.15 g 5000 Tape & Reel DB4 DB4 (Blue Body Coat) 0.15 g 5000 Tape & Reel Diagram 1: Voltage - current characteristic curve. Diagram 2: Test circuit. 10 kΩ 220 V + IF 500 kΩ D.U.T Rs=0 I C=0.1µF 50 Hz P Vo 10mA T410 R=20 Ω -V IBO IB + V Diagram 3: Rise time measurement. 0,5 VBO V VF lp VBO 90 % - IF 10 % tr 3/5 DB3 DB4 SMDB3 Fig. 1: Relative variation of VBO versus junction temperature (typical values). Fig. 2: Repetitive peak pulse current versus pulse duration (maximum values). ITRM(A) VBO [Tj] / VBO [Tj=25°C] 20.0 1.10 1.05 F=120Hz Tj initial=25°C 10.0 DB3/DB4 DB3/DB4 1.00 0.95 SMDB3 1.0 SMDB3 0.90 0.85 tp(µs) Tj(°C) 0.80 25 50 75 100 125 0.1 1 10 100 Fig. 3: Time duration while current pulse is higher 50mA versus C and Rs (typical values). tp(µs) 40 Tj=25°C 68Ω 35 30 47Ω 25 33Ω 20 15 22Ω 10 10Ω 5 0 10 C(nF) 0Ω 20 50 100 200 500 PACKAGE MECHANICAL DATA (in millimeters) DO-35 REF. C O /D 4/5 A C O /D DIMENSIONS Millimeters O / B Inches Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 C 28.00 D 0.458 1.102 0.558 0.018 0.022 DB3 DB4 SMDB3 PACKAGE MECHANICAL DATA (in millimeters) SOT-23 REF. A E DIMENSIONS Millimeters e D e1 B S Inches Min. Max. Min. Max. A 0.89 1.4 0.035 0.055 A1 0 0.1 0 0.004 B 0.3 0.51 0.012 0.02 c 0.085 0.18 0.003 0.007 D 2.75 3.04 0.108 0.12 e 0.85 1.05 0.033 0.041 e1 1.7 2.1 0.067 0.083 E 1.2 1.6 0.047 0.063 H 2.1 2.75 0.083 0.108 A1 L H L 0.6 typ. 0.024 typ. c S 0.35 0.65 0.014 0.026 FOOTPRINT 0.9 0.035 1.1 0.043 0.9 0.035 2.35 0.92 1.9 0.075 mm inch 1.1 0.043 1.45 0.037 0.9 0.035 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5