IRF520, SiHF520
Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

•
•
•
•
•
•
•

100

RDS(on) ()

VGS = 10 V

0.27

Qg (Max.) (nC)

16

Qgs (nC)

4.4

Qgd (nC)

7.7

Configuration

Single

Dynamic dV/dt Rating
Repetitive Avalanche Rated
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC

Available

RoHS*
COMPLIANT

D

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

G

G

D

S
S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF520PbF
SiHF520-E3
IRF520
SiHF520

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at 10 V

TC = 25 °C
TC = 100 °C

Pulsed Drain Currenta

ID
IDM

Linear Derating Factor

UNIT
V

9.2
6.5

A

37
0.40

W/°C

Single Pulse Avalanche Energyb

EAS

200

mJ

Repetitive Avalanche Currenta

IAR

9.2

A

Repetitive Avalanche Energya

EAR

6.0

mJ

Maximum Power Dissipation

TC = 25 °C

Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

60

W

dV/dt

5.5

V/ns

TJ, Tstg

- 55 to + 175
300d

°C

10

lbf · in

1.1

N·m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 , IAS = 9.2 A (see fig. 12).
c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91017
S11-0511-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

-

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

-

Maximum Junction-to-Case (Drain)

RthJC

-

2.5

UNIT

°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient

VDS

VGS = 0 V, ID = 250 μA

100

-

-

V

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.13

-

V/°C

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

-

-

25

VDS = 80 V, VGS = 0 V, TJ = 150 °C

-

-

250

Gate-Source Threshold Voltage

μA

-

-

0.27



gfs

VDS = 50 V, ID = 5.5 Ab

2.7

-

-

S

Input Capacitance

Ciss

VGS = 0 V,

-

360

-

Output Capacitance

Coss

VDS = 25 V,

-

150

-

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

-

34

-

Total Gate Charge

Qg

-

-

16

Gate-Source Charge

Qgs

-

-

4.4

Drain-Source On-State Resistance
Forward Transconductance

RDS(on)

ID = 5.5 Ab

VGS = 10 V

Dynamic

VGS = 10 V

ID = 9.2 A, VDS = 80 V,
see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

7.7

Turn-On Delay Time

td(on)

-

8.8

-

Rise Time
Turn-Off Delay Time

pF

nC

tr

VDD = 50 V, ID = 9.2 A,

-

30

-

td(off)

Rg = 18 , RD = 5.2, see fig. 10b

-

19

-

-

20

-

-

4.5

-

-

7.5

-

-

-

9.2

-

-

37

-

-

1.8

V

-

110

260

ns

-

0.53

1.3

μC

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

Between lead,
6 mm (0.25") from
package and center of
die contact

D

ns

nH

G

S

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

D

A

G

S

TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

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Document Number: 91017
S11-0511-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top

25 °C

101

4.5 V
100

ID, Drain Current (A)

ID, Drain Current (A)

101

175 °C

100
20 µs Pulse Width
VDS = 50 V

20 µs Pulse Width
TC = 25 °C
10-1

100

101

4

VDS, Drain-to-Source Voltage (V)

91017_01

Fig. 1 - Typical Output Characteristics, TC = 25 °C

ID, Drain Current (A)

101

4.5 V

100

20 µs Pulse Width
TC = 175 °C
10-1
91017_02

100

101

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Document Number: 91017
S11-0511-Rev. B, 21-Mar-11

6

7

8

9

10

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance
(Normalized)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top

5

VGS, Gate-to-Source Voltage (V)

91017_03

3.0
2.5

ID = 9.2 A
VGS = 10 V

2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0

91017_04

20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

Capacitance (pF)

600

450

Ciss

300
Coss
150
Crss

101

ISD, Reverse Drain Current (A)

750

0
100

0.8

VDS = 80 V

VDS = 20 V

8

4

91017_06

4

8

12

16

5

1.2

10 µs

2

100 µs

10
5

1 ms

2

10 ms

1

QG, Total Gate Charge (nC)

TC = 25 °C
TJ = 175 °C
Single Pulse

2

0.1
0.1

20

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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1.1

102

5

For test circuit
see figure 13

0

1.0

2

VDS = 50 V

0

0.9

Operation in this area limited
by RDS(on)

5

16

0.7

VSD, Source-to-Drain Voltage (V)

103

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

0.6

Fig. 7 - Typical Source-Drain Diode Forward Voltage

ID = 9.2 A

12

VGS = 0 V

91017_07

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

25 °C
100

10-1
0.5

101

VDS, Drain-to-Source Voltage (V)

91017_05

175 °C

91017_08

2

5

1

2

5

10

2

5

102

2

5

103

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91017
S11-0511-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix

RD
VDS

10

VGS

ID, Drain Current (A)

D.U.T.

RG

8

+
- VDD
10 V

6

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

4

Fig. 10a - Switching Time Test Circuit
2
VDS
0
25

50

75

100

125

150

90 %

175

TC, Case Temperature (°C)

91017_09

10 %
VGS
td(on)

Fig. 9 - Maximum Drain Current vs. Case Temperature

td(off) tf

tr

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

1

0 - 0.5
0.2
PDM

0.1
0.05
0.1

t1

0.02
0.01

10-2
10-5
91017_11

Single Pulse
(Thermal Response)

10-4

10-3

t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2

0.1

1

10

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91017
S11-0511-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix

L

VDS

VDS

Vary tp to obtain
required IAS

tp
VDD
D.U.T

RG

+
-

IAS

V DD

VDS

A

10 V
0.01 Ω

tp

IAS

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

600

ID
3.8 A
6.5 A
Bottom 9.2 A
Top

500
400
300
200
100
VDD = 25 V
0
25

91017_12c

50

75

100

125

175

150

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 kΩ

QG

10 V

12 V

0.2 µF
0.3 µF

QGS

QGD

+

D.U.T.

VG

-

VDS

VGS
3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

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Fig. 13b - Gate Charge Test Circuit

Document Number: 91017
S11-0511-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF520, SiHF520
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit
+

D.U.T.

Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer

+

-

-

Rg

•
•
•
•

+

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test

+
-

VDD

Driver gate drive
P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform
Reverse
recovery
current

Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple ≤ 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91017.

Document Number: 91017
S11-0511-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
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Vishay Siliconix

TO-220-1
A

E

DIM.

Q
H(1)
D

3

2

L(1)

1

M*

L

b(1)

INCHES

MIN.

MAX.

MIN.

MAX.

A

4.24

4.65

0.167

0.183

b

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

F
ØP

MILLIMETERS

c

0.36

0.61

0.014

0.024

D

14.33

15.85

0.564

0.624

E

9.96

10.52

0.392

0.414

e

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

F

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264
0.115

J(1)

2.41

2.92

0.095

L

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

ØP

3.53

3.94

0.139

0.155

Q

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C

b
e
J(1)
e(1)

Package Picture
ASE

Revison: 14-Dec-15

Xi’an

Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice
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Vishay

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
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Revision: 08-Feb-17

1

Document Number: 91000