PART OBSOLETE - USE ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage (non repetitive peak tp ≤ 2ms) V DS(sm) 100 V Continuous Drain Current at T amb=25°C ID 175 mA Drain Current Peak I DM 600 mA Gate-Source Voltage V GS ± 20 V Max Power Dissipation at T amb=25°C PD 300 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 87 Modular Avenue Commack NY11725 Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1995  This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PARAMETER SYMBOL MIN. Drain Source Breakdown Voltage B VDSS 80 TYP. MAX. Gate Source Threshold Voltage V GS(th) 1.5 Gate Body Leakage I GSS 100 nA VGS=20V Emitter Cut-Off Current I DSS 1 µA V DS=60V Static Drain-Source On-state Resistance R DS(on) 7 10 Ω I D=150mA, V GS=5V Transfer Admittance | yfs | 150 mS I D=175mA, V DS=5V Input Capacitance (2) 3.5 UNIT CONDITIONS. V I C=100µA V I D=1mA, V DS=V GS C iss 15 30 pF Common Source C oss Output Capacitance (2) 13 20 pF Reverse Transfer Capacitance (2) C rss 3 6 pF Switching Times T on 4 10 ns T off 4 10 ns V DS=10V, V GS=0V f=1MHz I D=175mA, V DD=50V V GS=0 to 10V (1) Swithcing times measured at 150Ω source impedance and <5ns rise time on a pulse generator (2) Sample test *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%