Preliminary Data Sheet QN7002 R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package QN7002-T1B-AT Pure Sn 3000p/Reel SC-59 (Mini Mold) Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Remark for Agent ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT” Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) 200 mA ID(pulse) ±800 mA Total Power Dissipation PT 200 mW Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note Note PW ≤ 10 μs, Duty Cycle ≤ 1% Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value. R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 Page 1 of 6 QN7002 Chapter Title Electrical Characteristics (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. UNIT 1 μA ±10 μA 2.5 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V VGS(th) VDS = VGS, ID = 250 μA 1.0 | yfs | VDS = 10 V, ID = 100 mA 150 RDS(on)1 VGS = 10 V, ID = 100 mA 2.1 2.7 Ω RDS(on)2 VGS = 4.5 V, ID = 50 mA 2.4 3.2 Ω Gate Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note mS Input Capacitance Ciss VDS = 10 V, 20 pF Output Capacitance Coss VGS = 0 V, 9 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 2 pF Turn-on Delay Time td(on) VDD = 10 V, 16 ns tr ID = 200 mA, 6.5 ns td(off) VGS = 10 V, 82 ns tf RG = 10 Ω 32 ns ID = 200 mA, VDD = 25 V, VGS = 10 V 2 nC 0.86 V Rise Time Turn-off Delay Time Fall Time Total Gate Charge Body Diode Forward Voltage QG Note VF(S-D) IF = 200 mA, VGS = 0 V Note Pulsed Test Circuit Switching Time D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% 90% VDS 90% VGS 0 90% VDS VDS τ τ = 1 μs Duty Cycle ≤ 1% R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 0 10% 10% tr td(off) Wave Form td(on) ton tf toff Page 2 of 6 QN7002 Chapter Title Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 80 60 40 20 0 0 25 50 75 100 125 150 0.2 0.1 0.0 175 0 75 100 125 150 175 TA – Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1 VDS = 5 V Pulsed 0.9 VGS = 10 V 0.8 ID - Drain Current - A ID - Drain Current - A 50 TA – Ambient Temperature - °C 1 0.7 0.6 4.5 V 0.5 0.4 0.3 0.1 TA = 125°C 75°C 25°C −25°C 0.01 0.001 0.2 0.1 Pulsed 0 0.0001 0 2 4 6 8 0 1 2 3 4 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage – V GATE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 1 VDS = VGS ID = 250 μ A 2.5 2 1.5 1 -50 0 50 100 Tch - Channel Temperature - °C R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 150 | yfs | - Forward Transfer Admittance - S VGS(th) - Gate Threshold Voltage - V 25 TA = −25°C 25°C 75°C 125°C 0.1 VDS = 10 V Pulsed 0.01 0.01 0.1 1 ID - Drain Current - A Page 3 of 6 QN7002 Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed 5 VGS = 4.5 V 10 V 0 0.001 0.01 0.1 1 10 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω 10 Pulsed ID = 100 mA 5 50 mA 0 0 2 ID - Drain Current - A 8 10 12 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 5 100 Pulsed 4 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω 6 VGS – Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = 4.5 V, ID = 50 mA 3 2 10 V, 100 mA 1 Ciss 10 Coss Crss 1 VGS = 0 V f = 1.0 MHz 0.1 0 -25 0 25 50 75 100 0.1 125 Tch - Channel Temperature - °C VGS – Gate to Source Voltage - V td(off) td(on) tr 1 0.001 100 10 VDD = 10 V, VGS = 10 V RG = 10 Ω tf 10 10 DYNAMIC INPUT CHARACTERISTICS 1000 100 1 VDS - Drain to Source Voltage – V SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 4 VDD = 48 V 30 V 25 V 8 6 4 2 ID = 200 mA 0 0.01 0.1 ID - Drain Current - A R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 1 0 1 2 3 QG – Gate Chage - nC Page 4 of 6 QN7002 Chapter Title SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF – Diode Forward Current - A 1 Pulsed VGS = 0 V 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) – Source to Drain Voltage - V R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 Page 5 of 6 QN7002 Chapter Title Package Drawings (Unit: mm) SC-59 (Mini Mold) 0.4 +0.1 –0.05 2.8 ±0.2 0.65 +0.1 –0.15 1.5 0.95 3 0.4 +0.1 –0.05 0.95 2.9 ±0.2 2 1 1. Source 2. Gate 3. Drain 0 to 0.1 1.1 to 1.4 0.16 +0.1 –0.06 0.3 Marking Equivalent Circuit Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 Page 6 of 6 Revision History QN7002 Data Sheet Rev. Date Page 1.00 Mar 11, 2011 − Description Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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