JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors
TO – 92

S9018

TRANSISTOR (NPN)
1.EMITTER

FEATURES
z High Current Gain Bandwidth Product

2.BASE
3.COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

25

V

VCEO

Collector-Emitter Voltage

18

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current -Continuous

50

mA

PC

Collector Power Dissipation

0.4

W

312.5

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

Thermal Resistance From Junction To Ambient

RθJA

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

25

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=0.1mA,IB=0

18

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

4

V

Collector cut-off current

ICBO

VCB=20V,IE=0

0.1

nA

Collector cut-off current

ICEO

VCE=15V,IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB=3V,IC=0

0.1

μA

DC current gain

hFE

VCE=5V, IC=1mA

Collector-emitter saturation voltage

VCE(sat)

IC=10mA,IB=1mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=10mA,IB=1mA

1.42

V

fT

Transition frequency

28

270

800

VCE=5V,IC=50mA,f=400MHz

MHz

CLASSIFICATION OF hFE
RANK

D

E

F

G

H

I

J

RANGE

28-45

39-60

54-80

72-108

97-146

132-198

180-270

A,Jun,2011

Typical Characteristics
Static Characteristic

10

(mA)

COMMON EMITTER
VCE=5V

COMMON
EMITTER
Ta=25℃

90uA
8

hFE

IC

80uA

DC CURRENT GAIN

70uA

COLLECTOR CURRENT

hFE —— IC

160

100uA

60uA

6

S9018

50uA
40uA

4

30uA

Ta=100℃

120

Ta=25℃
80

40

20uA

2

IB=10uA
0

0
0

2

4

6

8

COLLECTOR-EMITTER VOLTAGE

VCE

10

1

VCEsat ——

VBEsat —— IC

1.0

Ta=100℃
0.6

——

Ta=100℃

0.1

Ta=25℃

1

VBE

50

10

COLLECTOR CURRENT

Cob / Cib

10

——

IC

(mA)

VCB / VEB

COMMON EMITTER
VCE=5V

f=1MHz
IE=0 / IC=0
Ta=25℃

Ta=100℃
Cib

CAPACITANCE

C

(pF)

10

Ta=25℃
1

0.1
0.2

0.6

fT

1200

Cob
1

0.1
0.4

0.8

1.0

BASE-EMITTER VOLTAGE

——

1.2

1

10

REVERSE VOLTAGE

VBE(V)

IC

PC

0.5

1000

fT
TRANSITION FREQUENCY

IC
β=10

(mA)

COLLECTOR POWER DISSIPATION
PC (W)

COLLECTOR CURRENT

IC (mA)

IC

IC

(mA)

0.01

50

10

COLLECTOR CURRENT

(MHz)

COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)

BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)

Ta=25℃
0.8

1

IC

0.3

β=10

0.4
0.1

50

10

COLLECTOR CURRENT

(V)

800

600

400

VCE=5V

——

V

20

(V)

Ta

0.4

0.3

0.2

0.1

Ta=25℃
200

0.0
1

10

3

COLLECTOR CURRENT

IC

(mA)

20

0

25

50

75

AMBIENT TEMPERATURE

100

Ta

125

150

(℃ )

A,Jun,2011