2SC1623 SOT-23 Plastic-Encapsulate Transistors (NPN) FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PD Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test conditions Parameter Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA 90 200 600 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA 1 V fT Transition frequency VCE=6V,IC=10mA 250 MHz CLASSIFICATION OF hFE L4 L5 L6 L7 90-180 135-270 200-400 300-600 L4 L5 L6 L7 Rank Range Marking FASTSTAR SEMICONDUCTOR CO.,LTD. 1/1 www.faststar.com.cn